NTE236 NTE ELECTRONICS, NTE236 Datasheet
NTE236
Manufacturer Part Number
NTE236
Description
RF BJT, NPN, 25V, 6A, 27MHZ, TO-200AB
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE236.pdf
(2 pages)
Specifications of NTE236
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
25V
Transition Frequency Typ Ft
27MHz
Power Dissipation Pd
20W
Dc Collector Current
6A
Dc Current Gain Hfe
180
Rohs Compliant
Yes
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Description:
The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output
power class AB amplifier applications in the HF band.
Features:
D High Power Gain: G
D High Reliability
Application:
D 10 to 14 Watt Output Power Class AB Amplifier Applications in the HF band
Absolute Maximum Ratings: (T
Collector−Base Voltage, V
Collector−Emitter Voltage (R
Emitter−Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Ambient, R
Thermal Resistance, Junction−to−Case, R
T
T
A
C
= 25°C
= 25°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
pe
EBO
CBO
≥ 12dB, P
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= ∞), V
(P
Silicon NPN Transistor
Final RF Power Output
A
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25°C unless otherwise specified)
O
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 16W, 27MHz, SSB)
= 16W, f = 27MHz
CEO
TO220AB
thJC
NTE236
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55° to +150°C
73.5°C/W
6.25°C/W
+150°C
Rev. 12−10
1.7W
20W
60V
25V
5V
6A
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NTE236 Summary of contents
Page 1
... Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features: D High Power Gain: G ≥ 12dB High Reliability Application Watt Output Power Class AB Amplifier Applications in the HF band Absolute Maximum Ratings: (T Collector− ...
Page 2
Electrical Characteristics: (T Parameter Emitter−Base Breakdown Voltage Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency .147 (3.75) Dia Max .070 (1.78) .100 (2.54) = +25°C unless otherwise specified) ...