PD413PI2E00F Sharp Microelectronics, PD413PI2E00F Datasheet - Page 3

• Manufacturer Part Number: PD413PI2E00F
• Description: PHOTODIODE IR 960NM SIDE LOOK
• Manufacturer: Sharp Microelectronics

Specifications of PD413PI2E00F

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 425-2453-5

Fig. 7 Relative Output vs. Ambient Temperature
Fig. 9 Relative Output vs. Distance
Please refer to the chapter "Precautions for Use". (Page 78 to 93)
Semiconductor laser
160
140
120
100
100
Pulse generator
0.1
80
60
40
20
10
10
0
1
- 25
Test Circuit for Response Time
Distance between emitter and detector d (mm)
- 4
(
Fix PD and GL at position so that distance
between them may be I
at I =20mA and Ta=25˚C
0
Ambient temperature T
F
(Detector : GL537/GL538)
(Detector : GL537/GL538)
R
PD413PI
Output
10
L
I
OUT
-3
25
= 0.1mA
GL537/ GL538
+
GL537
SC
50
Test circuit
10V
=100 A
10
Output
- 2
Input
a
( ˚C )
I
Ta= 25˚C
t
F
r
GL538
75
= 20mA
PD413Pl
)
A
10
100
-1
t
r
90%
10%
Fig. 8 Radiation Diagram
Fig. 10 Response Time vs. Load Resistance
10
10
- 30˚
- 40˚
- 50˚
- 60˚
- 70˚
- 80˚
- 90˚
10
10
10
-
-
5
2
5
2
5
2
5
2
2
1
0
1
2
10
V
T
a
R
2
= 25˚C
= 10V
- 20˚
5
Load resistance R
10
Angular displacement
2
-10˚
2
5
10
0
0
80
60
40
20
3
100
2
L
+10˚
( )
5
10
( T
4
a
2
+ 20˚
= 25˚C )
5
PD413PI
10
+ 30˚
+ 40˚
+ 50˚
+ 60˚
+ 70˚
+ 80˚
+ 90˚
5