SDP8436-004 Honeywell Sensing and Control, SDP8436-004 Datasheet

PHOTOTRANSISTOR SILICON NPN T-1

SDP8436-004

Manufacturer Part Number
SDP8436-004
Description
PHOTOTRANSISTOR SILICON NPN T-1
Manufacturer
Honeywell Sensing and Control
Datasheets

Specifications of SDP8436-004

Lead Free Status / Rohs Status
Lead free / RoHS Compliant
FEATURES
DESCRIPTION
The SDP8436 is an NPN silicon phototransistor molded
in a black plastic package which combines the mounting
advantages of a side-looking package with the narrow
acceptance angle and high optical gain of a T- 1
package. The SDP8436 is designed for those
applications which require longer coupling distances
than standard side- looking devices can provide, such
as touch screens. The device is also well suited to
applications in which adjacent channel crosstalk could
be a problem. The package is highly transmissive to the
IR source energy while it provides effective shielding
against visible ambient light.
SDP8436
Silicon Phototransistor
128
Side-looking plastic package
18¡ (nominal) acceptance angle
Enhanced coupling distance
Internal visible light rejection filter
Low profile for design flexibility
Wide sensitivity ranges
Mechanically matched to SEP8736 infrared
emitting diode
DIM_019.ds4
INFRA-82.TIF
Tolerance
OUTLINE DIMENSIONS in inches (mm)
3 plc decimals
2 plc decimals
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
±0.005(0.12)
±0.020(0.51)

Related parts for SDP8436-004

SDP8436-004 Summary of contents

Page 1

... Wide sensitivity ranges Mechanically matched to SEP8736 infrared emitting diode DESCRIPTION The SDP8436 is an NPN silicon phototransistor molded in a black plastic package which combines the mounting advantages of a side-looking package with the narrow acceptance angle and high optical gain package. The SDP8436 is designed for those ...

Page 2

... SDP8436 Silicon Phototransistor ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL ABSOLUTE MAXIMUM RATINGS (25¡C Free-Air Temperature unless otherwise noted) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation Operating Temperature Range Storage Temperature Range Soldering Temperature (5 sec) Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. ...

Page 3

... SDP8436 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT Fig. 1 Responsivity vs Angular Displacement 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -40 -30 -20 -10 0 +10 +20 +30 +40 Angular displacement - degrees Fig. 3 Dark Current vs Temperature 130 SWITCHING WAVEFORM cir_015.cdr Fig. 2 Collector Current vs Ambient Temperature gra_013 ...

Page 4

... SDP8436 Silicon Phototransistor Fig. 5 Spectral Responsivity 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 700 800 900 1000 Wavelength - nm All Performance Curves Show Typical Values Honeywell reserves the right to make changes in order to improve design and supply the best products possible. ...

Related keywords