MJE803S Fairchild Semiconductor, MJE803S Datasheet
首页 Discrete Semiconductor Products BJT - Darlington MJE803S
Manufacturer Part Number
MJE803S
Manufacturer
Fairchild Semiconductor
Specifications of MJE803S
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2.5V
Collector Current (dc) (max)
4A
Dc Current Gain
750
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-126
Lead Free Status / Rohs Status
Compliant
Available stocks
Manufacturer:
Fairchild Semiconductor
©2001 Fairchild Semiconductor Corporation
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h
• Complement to MJE700/701/702/703
V
I
I
P
T
h
V
V
V
T
BV
I
I
I
V
C
B
CEO
CBO
EBO
FE
J
EBO
C
STG
CE
CBO
CEO
Symbol
BE
Symbol
CEO
(sat)
(on)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter ON Voltage
Collector-Emitter Saturation Voltage
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
FE
Parameter
= 750 (Min.) @ I
Parameter
: MJE800/801
: MJE802/803
: MJE800/801
: MJE802/803
: MJE801/803
: ALL DEVICES
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE800/802
MJE800/801/802/803
C
T
=25 C)
C
=25 C unless otherwise noted
T
C
C
= 1.5 and 2.0A DC
=25 C unless otherwise noted
: MJE800/801
: MJE800/801
: MJE802/803
: MJE802/803
I
V
V
V
V
T
V
V
V
V
I
I
I
V
V
V
C
C
C
C
C
CE
CE
CB
CB
BE
CE
CE
CE
CE
CE
CE
= 50mA, I
= 1.5A, I
= 2A, I
= 4A, I
= 100 C
= 60V, I
= 80V, I
= Rated BV
= Rated BV
= 5V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
- 55 ~ 150
B
B
Test Condition
= 40mA
= 40mA
C
C
C
C
B
C
C
C
Value
B
B
B
150
= 0
= 30mA
= 1.5A
= 2A
= 4A
= 1.5A
= 2A
= 4A
0.1
60
80
60
80
40
= 0
= 0
= 0
5
4
CEO
CEO
, I
, I
E
E
Units
= 0
= 0
W
V
V
V
V
V
A
A
1
C
C
1. Emitter
B
R 1 10 k
R 2 0.6 k
2.Collector
Equivalent Circuit
Min.
750
750
100
60
80
R1
TO-126
Max.
100
100
100
500
2.5
2.8
2.5
2.5
3
3
R2
2
3.Base
Rev. A1, February 2001
C
E
Units
mA
V
V
V
V
V
V
V
V
A
A
A
A
Related parts for MJE803S
MJE803S Summary of contents
... Collector Cut-off Current CEO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter ON Voltage BE ©2001 Fairchild Semiconductor Corporation MJE800/801/802/803 = 1.5 and 2. =25 C unless otherwise noted C Value : MJE800/801 60 : MJE802/803 80 : MJE800/801 60 : MJE802/803 0.1 =25 C) ...
... (sat) CE 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 10 1 MJE800/801 MJE802/803 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 10000 1000 I = 150 100 A B 100 0.01 1000 I = 500 100 10 1 0.01 ...
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...
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