DG411HSDJ-E3 Vishay, DG411HSDJ-E3 Datasheet - Page 3

• Manufacturer Part Number: DG411HSDJ-E3
• Description: IC SWITCH QUAD SPST 16-DIP
• Manufacturer: Vishay

Specifications of DG411HSDJ-E3

• Function: Switch
• Circuit: 4 x SPST - NC
• On-state Resistance: 35 Ohm
• Current - Supply: -1µA, 1&microA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Analog Switch Type: SPST
• No. Of Channels: 4
• On State Resistance Max: 25ohm
• Turn Off Time: 42ns
• Turn On Time: 68ns
• Supply Voltage Range: 10.8V To 13.2V
• Operating Temperature Range: -40°C To +85°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
a. Signals on S
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
f. Derate 23.5 mW/°C above 70 °C.
Document Number: 72053
S11-0179-Rev. C, 07-Feb-11
ABSOLUTE MAXIMUM RATINGS
Parameter
V+ to V-
GND to V-
V
Digital Inputs
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Package)
SPECIFICATIONS
Parameter
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Switch Off
Leakage Current
Channel On
Leakage Current
Digital Control
Input Current, V
Input Current, V
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
L
a
X
, V
, D
IN
IN
e
S
X
, V
e
Low
High
, or IN
D
e
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
a
b
V
Symbol
R
ANALOG
I
I
I
DS(on)
t
S(off)
D(off)
D(on)
C
t
OFF
I
I
ON
t
Q
IH
IL
D
IN
V
V
D
V
g
I
DG413HS only, V
V+ = 13.5 V, V- = - 13.5 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
S
V
L
= 0 V, R
= ± 15.5 mA, V
R
R
V+ = 15 V, V- = - 15 V
V
V
S
= 5 V, V
= - 10 mA, V
L
L
V
Unless Specified
IN
IN
(AK, AZ Suffix)
(DJ, DY, DN Suffix)
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin CerDIP
LCC-20
16-Pin (4 x 4 mm) QFN
= ± 10 V, see figure 2
Test Conditions
= 300 , C
= 300 , C
D
under test = 0.8 V
under test = 2.4 V
= V
f = 1 MHz
g
IN
S
= 0 , C
e
= ± 15.5 V
= 2.4 V, 0.8 V
D
L
L
S
= ± 8.5 V
= 35 pF
= 35 pF
S
= ± 15.5 V
e
L
= 10 V
= 10 nF
c
d
f
f
DG411HS, DG412HS, DG413HS
Temp.
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Full
Full
Full
Full
Full
Full
Full
b
or 30 mA, whichever occurs first
0.005
0.005
Typ.
± 0.1
± 0.1
± 0.1
25
68
42
20
22
(GND - 0.3) to (V+) + 0.3
5
c
(V-) - 2 to (V+) + 2
- 65 to 150
- 65 to 125
- 55 °C to 125 °C
- 0.25
- 0.25
Min.
- 0.4
- 0.5
- 0.5
- 15
- 20
- 20
- 40
Limit
1880
100
470
600
900
900
44
25
30
A Suffix
d
Max.
0.25
0.25
105
127
0.4
0.5
0.5
15
35
45
20
20
40
80
94
d
Vishay Siliconix
- 40 °C to 85 °C
Min.
- 0.25
- 0.25
- 0.5
- 0.5
- 0.4
- 15
- 10
- 5
- 5
D Suffix
d
www.vishay.com
Max.
0.25
0.25
105
116
0.4
0.5
0.5
15
35
45
10
80
90
5
5
d
Unit
mW
mA
°C
V
Unit
pC
nA
µA
pF
ns

V
3