DG201BDY-T1-E3 Vishay, DG201BDY-T1-E3 Datasheet - Page 7

IC SWITCH QUAD SPST 16SOIC

DG201BDY-T1-E3

Manufacturer Part Number
DG201BDY-T1-E3
Description
IC SWITCH QUAD SPST 16SOIC
Manufacturer
Vishay
Datasheet

Specifications of DG201BDY-T1-E3

Function
Switch
Circuit
4 x SPST - NC
On-state Resistance
85 Ohm
Voltage Supply Source
Dual Supply
Voltage - Supply, Single/dual (±)
±4.5 V ~ 22 V
Current - Supply
50µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SOIC (0.154", 3.90mm Width)
Number Of Switches
Quad
Switch Configuration
SPST
On Resistance (max)
160 Ohms @ 12 V
On Time (max)
300 ns @ +/- 15 V
Off Time (max)
200 ns @ +/- 15 V
Off Isolation (typ)
95 dB
Supply Voltage (max)
25 V
Supply Voltage (min)
4.5 V
Maximum Power Dissipation
640 mW
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Off State Leakage Current (max)
+/- 5 nA
Switch Current (typ)
30 mA
Analog Switch Type
SPST
No. Of Channels
4
On State Resistance Max
45ohm
Turn Off Time
65ns
Turn On Time
120ns
Supply Voltage Range
4.5V To 25V
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DG201BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DG201BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
DG201BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
DG201BDY-T1-E3
0
Company:
Part Number:
DG201BDY-T1-E3
Quantity:
5 000
Company:
Part Number:
DG201BDY-T1-E3
Quantity:
70 000
TEST CIRCUITS
Document Number: 70037
S11-0179-Rev. I, 07-Feb-11
V
S
V
= + 2 V
S
V
3 V
g
R
Off Isolation = 20 log
g
= 50 Ω
0 V, 2.4 V
3 V
R
g
S
IN
Figure 3. Off Isolation
GND
C
IN
+ 15 V
S
S
IN
GND
V+
GND
V
V
S
O
- 15 V
+ 15 V
V-
V
V+
+ 15 V
O
V+
D
= V
- 15 V
V-
- 15 V
S
V-
D
D
R
R
1
L
L
C
+ R
R
DS(on)
L
Figure 5. Charge Injection
Figure 2. Switching Time
C
1000 pF
L
C
35 pF
V
R
L
O
L
V
V
O
O
X
C = RF bypass
TALK
V
S
Isolation = 20 log
Output
Switch
Logic
Input
R
g
The charge injection in coulombs is Q = C
ΔV
Figure 4. Channel-to-Channel Crosstalk
= 50
0 V, 2.4 V
0 V, 2.4 V
O
= measured voltage error due to charge injection
V
Ω
3 V
0 V
O
V
IN
NC
O
X
C
V
V
ON
S
O
S
IN
S
IN
1
2
DG201B, DG202B
1
2
t
ON
GND
50 %
+ 15 V
V+
90 %
ΔV
OFF
Vishay Siliconix
O
- 15 V
V-
t
D
D
L
OFF
1
2
x Δ V
www.vishay.com
ON
C
O
t
t
r
f
< 20 ns
< 20 ns
50
R
V
L
Ω
O
7

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