NAND512W3A2DZA6E Micron Technology Inc, NAND512W3A2DZA6E Datasheet - Page 42
NAND512W3A2DZA6E
Manufacturer Part Number
NAND512W3A2DZA6E
Description
Manufacturer
Micron Technology Inc
Datasheet
1.NAND512W3A2DZA6E.pdf
(53 pages)
Specifications of NAND512W3A2DZA6E
Cell Type
NAND
Density
512Mb
Access Time (max)
12us
Interface Type
Parallel
Address Bus
26b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
64M
Supply Current
30mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND512W3A2DZA6E
Manufacturer:
HOLT
Quantity:
101
Company:
Part Number:
NAND512W3A2DZA6E
Manufacturer:
ST
Quantity:
11 320
Company:
Part Number:
NAND512W3A2DZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
DC and AC parameters
Figure 25. Read C operation, one page AC waveforms
1. A0-A7 is the address in the spare memory area, where A0-A3 are valid and A4-A7 are don’t care.
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RB
CL
I/O
AL
W
R
E
Command
Code
50h
Add. M
cycle 1
Address M Input
Add. M
cycle 2
Add. M
cycle 3
tWHALL
Add. M
cycle 4
Busy
tBHRL
NAND512xxA2D, NAND01GxxA2C
tWHBH
Last Byte or Word in Area C
Data Output from M to
Data M
tALLRL2
Data
Last
ai08035b