DG612DY-E3 Vishay, DG612DY-E3 Datasheet - Page 8

• Manufacturer Part Number: DG612DY-E3
• Description: IC SWITCH QUAD SPST 16-SOIC
• Manufacturer: Vishay
• Type: Analog Switchr

Specifications of DG612DY-E3

• Bandwidth: 500 MHz
• Function: Switch
• Circuit: 4 x SPST - NO
• On-state Resistance: 45 Ohm
• Voltage Supply Source: Single, Dual Supply
• Voltage - Supply, Single/dual (±): 10 V ~ 18 V, ±10 V ~ 15 V
• Current - Supply: -1µA, 1&microA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Number Of Switches: Quad
• Switch Configuration: SPST
• On Resistance (max): 60 Ohms
• On Time (max): 35 ns
• Off Time (max): 25 ns
• Off Isolation (typ): 74 dB
• Supply Voltage (max): 21 V
• Supply Voltage (min): 5 V
• Supply Current: 0.000005 mA
• Maximum Power Dissipation: 600 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Off State Leakage Current (max): 20 nA
• Analog Switch Type: SPST
• No. Of Channels: 4
• On State Resistance Max: 45ohm
• Turn Off Time: 16ns
• Turn On Time: 19ns
• Supply Voltage Range: 5V To 21V
• Multiplexer Configuration: Quad SPST
• Number Of Inputs: 4
• Number Of Outputs: 4
• Number Of Channels: 4
• Package Type: SOIC N
• Power Supply Requirement: Single/Dual
• Single Supply Voltage (min): 10V
• Single Supply Voltage (typ): 12/15V
• Single Supply Voltage (max): 18V
• Dual Supply Voltage (min): ±10V
• Dual Supply Voltage (typ): ±12V
• Dual Supply Voltage (max): ±15V
• Power Dissipation: 600mW
• Mounting: Surface Mount
• Pin Count: 16
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

DG611, DG612, DG613
Vishay Siliconix
TEST CIRCUITS
APPLICATIONS
High-Speed Sample-and-Hold
In a fast sample-and-hold application, the analog switch
characteristics are critical. A fast switch reduces aperture
uncertainty. A low charge injection eliminates offset (step)
errors. A low leakage reduces droop errors. The CLC111, a
fast input buffer, helps to shorten acquisition and settling
times. A low leakage, low dielectric absorption hold capacitor
must
polypropylene are good choices. The JFET output buffer
reduces droop due to its low input bias current.
(see figure 5.)
www.vishay.com
8
V
be
g
Analog
used.
Input
5 V
R
g
Figure 3. Charge Injection
Polycarbonate,
S
IN
GND
+ 5 V
V
L
75 
5 V Control
+ 15 V
- 3 V
V+
V-
Input Buffer
D
CLC111
polystyrene
Figure 5. High-Speed Sample-and-Hold
C
1 nF
V
L
O
S
IN
and
1
/
4
+ 5 V
DG611
X
Pixel-Rate Switch
Windows, picture-in-picture, title overlays are economically
generated using a high-speed analog switch such as the
DG613. For this application the two video sources must be
sync locked. The glitch-less analog switch eliminates halos.
(see figure 6.)
GaAs FET Drivers
Figure 7 illustrates a high-speed GaAs FET driver. To turn
the GaAs FET on 0 V are applied to its gate via S
to turn it off, - 8 V are applied via S
low-power driver is especially suited for applications that
require a large number of RF switches, such as phased array
radars.
C = RF bypass
TA LK
+ 12 V
- 5 V
D
Isolation = 20 log
V
S
R
C
650 pF Polystyrene
g
HOLD
= 50 
1 V, 4 V
1 V, 4 V
Output Buffer
+
-
LF356
NC
Figure 4. Crosstalk
V
V
S
O
C
S
IN
S
IN
+ 5 V
1
2
V
1
2
GND
L
S11-0154-Rev. I, 31-Jan-11
Document Number: 70057
± 5 V Output
to A/D
- 3 V
2
V-
. This high-speed,
+ 15 V
V+
D
D
1
2
C
1
C
, whereas
50 
R
V
O
L