M29W640FT70N6E Micron Technology Inc, M29W640FT70N6E Datasheet - Page 25
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M29W640FT70N6E
Manufacturer Part Number
M29W640FT70N6E
Description
Manufacturer
Micron Technology Inc
Datasheet
1.M29W640FT70N6E.pdf
(71 pages)
Specifications of M29W640FT70N6E
Cell Type
NOR
Density
64Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Top
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
10mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29W640FT70N6E
Manufacturer:
ST
Quantity:
1 000
Company:
Part Number:
M29W640FT70N6E
Manufacturer:
ST
Quantity:
17 280
Part Number:
M29W640FT70N6E
Manufacturer:
ST
Quantity:
20 000
4.2.5
4.2.6
4.2.7
Quadruple Word Program command
This is used to write a page of four adjacent Words (or 8 adjacent Bytes), in x16 mode,
simultaneously. The addresses of the four Words must differ only in A1 and A0.
Five bus write cycles are necessary to issue the command:
To perform the Quadruple Byte Program command, it is necessary to apply V
V
Unlock Bypass command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory faster than with the standard program commands. When
the cycle time to the device is long, considerable time saving can be made by using these
commands. Three Bus Write operations are required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
When V
Unlock Bypass mode and the Unlock Bypass Program command can be issued
immediately.
Unlock Bypass Program command
The Unlock Bypass command is used in conjunction with the Unlock Bypass Program
command to program the memory. When the cycle time to the device is long, considerable
time saving can be made by using these commands. Three Bus Write operations are
required to issue the Unlock Bypass command.
Once the Unlock Bypass command has been issued the memory will only accept the Unlock
Bypass Program command and the Unlock Bypass Reset command. The memory can be
read as if in Read mode.
The memory offers accelerated program operations through the V
When the system asserts V
enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass
program command sequence. The memory uses the higher voltage on the V
Protect pin, to accelerate the Unlock Bypass Program operation.
Never raise V
memory may be left in an indeterminate state.
PP
/WP pin.
The first bus cycle sets up the command.
The second bus cycle latches the Address and the Data of the first Word to be written.
The third bus cycle latches the Address and the Data of the second Word to be written.
The fourth bus cycle latches the Address and the Data of the third Word to be written.
The fifth bus cycle latches the Address and the Data of the fourth Word to be written
and starts the Program/Erase Controller.
PP
is applied to the V
PP
/Write Protect to V
PP
PP
on the V
/Write Protect pin the memory automatically enters the
PP
from any mode except Read mode, otherwise the
PP
/Write Protect pin, the memory automatically
PP
/Write Protect pin.
PP
PPH
/Write
to the
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