EMI4182MTTAG ON Semiconductor, EMI4182MTTAG Datasheet - Page 2

• Manufacturer Part Number: EMI4182MTTAG
• Description: 58T1758
• Manufacturer: ON Semiconductor

Specifications of EMI4182MTTAG

• Rohs Compliant: YES
• Diode Type: EMI & ESD Protection
• Clamping Voltage Vc Max: 18V
• No. Of Pins: 10
• Svhc: No SVHC (20-Jun-2011)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Standard IEC61000−4−2 with C
2. These measurements performed with no external capacitor.
3. TVS devices are normally selected according to the working peak reverse voltage (V
4. V
PIN FUNCTION DESCRIPTION
ELECTRICAL CHARACTERISTICS
Operating Temperature Range
Storage Temperature Range
ESD Discharge IEC61000−4−2 Contact Discharge
Maximum Lead Temperature for Soldering Purposes
(1/8” from Case for 10 seconds)
DC Current per Line
ABSOLUTE MAXIMUM RATINGS
Symbol
or continuous peak operating voltage level.
V
I
F
V
R
R
LEAK
f
V
V
C
BR
RWM
V
3dB
atten
ESD
DYN
CH
BR
CL
IN
Pin Name
F
Out_1+
Out_1−
Out_2+
Out_2−
is measured at pulse test current I
In_1+
In_1−
In_2+
In_2−
V
N
Channel Leakage Current
Channel Negative Voltage
Channel Input Capacitance to Ground
(Pins 1, 2, 4, 5 to Pins 3, 8)
Channel Resistance
(Pins 1−10, 2−9, 4−7 and 5−6)
Differential Mode Cut−off Frequency
Common Mode Stop Band Attenuation
ESD Protection − Peak Discharge
Voltage at any channel input, in system:
Contact discharge per
IEC61000−4−2 standard
TLP Clamping Voltage
(See Figure 12)
Dynamic Resistance
Positive Transients
Negative Transients
Reverse Working Voltage
Breakdown Voltage
Pin No.
3, 8
Parameter
10
1
2
9
4
5
7
6
Discharge
Parameter
(T
T
(T
.
A
= 150 pF, R
A
= 25°C unless otherwise noted)
= 25°C unless otherwise noted)
Type
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
Discharge
http://onsemi.com
T
T
T
V
50 W Source and Load Termination
@ 800 MHz
T
(Notes 1 and 2)
Pins 1, 2, 4, 5
Forward I
Forward I
Forward I
Forward I
T
Any I/O pin to Ground;
Notes 1 and 3
(Note 3)
I
T
A
A
A
A
A
IN
= 1 mA; (Note 4)
= 25°C, V
= 25°C, I
= 25°C, At 1 MHz, GND = 0 V,
= 25°C
= 25°C, I
= 1.65 V
= 330, GND grounded.
CMF Channel 1+ to Connector
CMF Channel 1− to Connector
CMF Channel 1+ to ASIC
CMF Channel 1− to ASIC
CMF Channel 2+ to Connector
CMF Channel 2− to Connector
CMF Channel 2+ to ASIC
CMF Channel 2− to ASIC
Ground
PP
PP
PP
PP
2
Test Conditions
F
PP
= 8 A
= 16 A
= −8 A
= −16 A
IN
= 10 mA
= 1 A, t
= 5 V, GND = 0 V
P
= 8/20 ms
RWM
Symbol
T
I
T
V
LINE
STG
T
OP
PP
L
), which should be equal to or greater than the DC
Description
Min
±15
0.1
5.6
−65 to +150
−40 to +85
Value
1.36
Typ
−12
±15
260
100
0.8
8.0
2.0
0.6
30
12
18
−6
Max
1.0
1.5
1.3
5.0
9.0
GHz
Unit
Unit
mA
mA
dB
°C
°C
kV
°C
pF
kV
W
V
V
V
V
V
V
V