SEMIX352GB128DS SEMIKRON, SEMIX352GB128DS Datasheet - Page 2

• Manufacturer Part Number: SEMIX352GB128DS
• Description: 16M0113
• Manufacturer: SEMIKRON

Specifications of SEMIX352GB128DS

• Collector Emitter Voltage Vces: 2.35V
• Collector Emitter Voltage V(br)ceo: 1.15V
• Collector Emitter Saturation Voltage Vce(sat): 2.35V
• Rise Time: 55ns
• Pulsed Collector Current: 400A
• Current, Ifs Max: 2000A
• Rohs Compliant: Yes
• Continuous Collector Current Max: 370A
• Transistor Polarity: N Channel

SEMiX 352GB128Ds
2
Fig. 1 Typ. output characteristic, inclusive R
Fig. 3 Typ. turn-on /-off energy = f (I
Fig. 5 Typ. transfer characteristic
C
)
CC'+ EE'
15-06-2005 SEN
Fig. 2 Rated current vs. temperature I
Fig. 4 Typ. turn-on /-off energy = f (R
Fig. 6 Typ. gate charge characteristic
G
C
)
= f (T
C
)
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