SKM 195 GB 126 DN SEMIKRON, SKM 195 GB 126 DN Datasheet
SKM 195 GB 126 DN
Manufacturer Part Number
SKM 195 GB 126 DN
Description
88K1194
Manufacturer
SEMIKRON
Datasheet
1.SKM_195_GB_126_DN.pdf
(3 pages)
Specifications of SKM 195 GB 126 DN
Transistor Polarity
N Channel
Dc Collector Current
220A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Rohs Compliant
Yes
SEMITRANS
Trench IGBT Module
SKM 195GB126DN
SKM 195GAL126DN
Preliminary Data
Features
Typical Applications
Homogeneous Si
Trench = Trenchgate technology
V
High short circuit capability, self limiting to 6 x I
AC inverter drives
UPS
Electonic welders
CEsat
GB
with positive temperature coefficient
TM
GAL
2N
SKM 195GB126DN
c
Symbol
IGBT
Inverse diode
Freewheeling diode
Symbol
IGBT
Inverse diode
FWD
V
I
I
V
T
V
I
I
I
I
I
I
V
I
V
r
V
C
C
C
L
R
t
t
t
t
E
V
V
r
I
Q
E
V
V
r
I
Absolute Maximum Ratings T
Characteristics T
d(on)
r
d(off)
f
C
CRM
F
FRM
FSM
F
FRM
FSM
CES
CE
T
RRM
T
RRM
vj
ies
oes
res
CE
CC'+EE'
on
rr
CES
GES
isol
GE(th)
CE(TO)
CE(sat)
F
(TO)
rr
F
(TO)
, (T
= V
= V
(E
off
stg
EC
EC
)
)
Conditions
V
V
T
V
I
under following conditions
V
res., terminal-chip T
V
R
V
I
T
T
I
di/dt = 2000 A/µs
V
I
T
T
I
C
F
F
F
F
j
Gon
j
j
j
j
GE
GE
GE
GE
CC
GE
GE
Conditions
T
t
T
AC, 1 min.
T
t
t
T
T
t
= 150 A; V
= 150 A; T
= 150 A; V
= 150 A; T
= 25 (125) °C
= 150 A, V
= 25 (125) °C
= 25 (125) °C
= 25 (125) °C
= 25 (125) °C
p
p
p
p
c
OPERATION
c
c
c
= 1 ms
= 1 ms
= 10 ms; sin.; T
= 10 ms; sin.; T
= 25 (80) °C
= 25 (80) °C
= 25 (80) °C
= 25 (80) °C, t
= V
= 0, V
= 15 V, T
= 0, V
= 600 V, I
= ± 15 V
= 0 V
= R
CE
Goff
Download PDF here
c
CE
CE
, I
= 25 °C, unless otherwise specified
C
j
j
= 5 Ω, T
GE
GE
GE
= V
= 25 V, f = 1 MHz
j
= 125 ( ) °C
= 125 ( ) °C
C
= 6 mA
= 25 (125) °C
= 0 V; T
= 0 V, T
= 15 V, chip level
= 150 A
T
CES
stg
p
j
j
c
= 1 ms
= 150 °C
= 150 °C
= 25 (125) °C
, T
j
= 125 °C
c
j
j
j
= 25 (125) °C
= 25 °C, unless otherwise specified
= 25 (125) °C
= 25 (125) °C
- 40 ... + 150 (125)
220 (160)
200 (160)
200 (160)
440 (320)
Values
min.
1200
4000
1450
1450
± 20
440
440
5
4,7 (7,3)
1,6 (1,6) 1,8 (1,8)
1,6 (1,6) 1,8 (1,8)
0,75 (1)
16 (21)
1 (0,9)
1,7 (2)
1 (0,8) 1,1 (0,9)
4 (5,3)
1 (0,8) 1,1 (0,9)
4 (5,3)
10,5
14,5
typ.
300
560
100
200
200
5,8
0,2
0,9
0,8
40
33
Units
°C
4,7 (6)
4,7 (6)
V
A
A
V
V
A
A
A
A
A
A
max.
1,15
2,15
6,5
0,6
6,7
25
Units
mA
mΩ
mΩ
mΩ
mΩ
nH
mJ
µC
mJ
nF
nF
nF
ns
ns
ns
ns
V
V
V
V
V
A
V
V
A
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SKM 195 GB 126 DN Summary of contents
Page 1
SKM 195GB126DN TM SEMITRANS 2N Trench IGBT Module SKM 195GB126DN SKM 195GAL126DN Preliminary Data Features Homogeneous Si Trench = Trenchgate technology V with positive temperature coefficient CEsat High short circuit capability, self limiting Typical Applications AC ...
Page 2
Fig. 1 Typ. output characteristic, inclusive R Q di/dt = 2000 A/µ Thermal characteristics R per IGBT th(j-c) R per Inverse Diode th(j-c)D R per FWD th(j-c)FD R per module th(c-s) Mechanical ...
Page 3
UL Recognized File no 532 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made ...