IRGB6B60K International Rectifier, IRGB6B60K Datasheet - Page 2

• Manufacturer Part Number: IRGB6B60K
• Description: 03H4545
• Manufacturer: International Rectifier

Specifications of IRGB6B60K

• Dc Collector Current: 13A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 90W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Rohs Compliant: No

IRG/B/S/SL6B60K
Electrical Characteristics @ T
Note
Switching Characteristics @ T
RBSOA
SCSOA
t
V
∆V
V
V
∆
g
I
I
Qg
Qge
Qgc
E
E
E
t
t
t
t
E
E
E
t
t
t
C
C
C
r
CES
GES
d(on)
r
d(off)
f
d(on)
d(off)
f
V
fe
(BR)CES
CE(on)
GE(th)
on
off
tot
on
off
tot
ies
oes
res
(BR)CES
2
GE(th)
 to „ are on page 13
/
∆
/∆T
T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
–––
––– 2.20 2.50
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 18.2
–––
–––
–––
–––
–––
–––
––– 13.2
–––
–––
–––
–––
–––
–––
–––
3.5
1.5
10
FULL SQUARE
1.80 2.20
–––
200
––– ±100
110
135
245
215
150
190
340
240
290
0.3
4.5
-10
3.0
1.0
9.2
1.9
–––
10
25
17
28
17
18
34
–––
–––
––– mV/°C V
–––
150
500
–––
–––
210
245
230
260
300
255
–––
–––
–––
–––
455
560
5.5
–––
34
26
22
37
26
27
V/°C
µA
nA
nC
pF
V
V
V
S
µJ
ns
µJ
ns
µs
V
V
I
I
V
V
V
V
V
I
V
V
I
V
Ls = 150nH
I
V
Ls = 150nH, T
I
V
Ls = 150nH
I
V
Ls = 150nH, T
V
V
f = 1.0MHz
T
V
T
V
C
C
C
C
C
C
C
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
= 5.0A, V
= 5.0A,V
= 5.0A
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 5.0A, V
= 150°C, I
= 150°C, Vp =600V, R
= 500V, V
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V,R
= 15V, R
= 15V,R
= 15V, R
= 0V
= 30V
= 360V, V
GE
GE
, I
, I
C
C
GE
GE
CC
CC
CC
CC
CE
CE
C
C
C
Conditions
Conditions
G
G
= 500µA
= 1.0mA, (25°C-150°C)
C
G
G
GE
= 250µA
= 1.0mA, (25°C-150°C)
= 15V,
= 5.0A, PW=80µs
J
J
= 100Ω, L =1.4mH
= 100Ω, L =1.4mH
GE
= 15V
= 26A, Vp =600V
= 600V
= 600V, T
= 400V
= 400V
= 400V
= 400V
= 100Ω L =1.4mH
= 100Ω L =1.4mH
= 25°C
= 150°C
=+15V to 0V,
= +15V to 0V
T
T
www.irf.com
J
J
= 25°C „
= 150°C „
J
G
= 150°C
T
= 100Ω
J
R
= 150°C
G
= 100Ω
5, 6,7
8,9,10
8,9,10
11
Ref.Fig.
Ref.Fig.
13, 15
WF1WF2
12,14
WF3
CT4
WF1
WF2
CT4
CT4
CT3
CT1
CT2
CT4
17
16
4