BTA16-800SW3G ON Semiconductor, BTA16-800SW3G Datasheet - Page 2

58T1371

BTA16-800SW3G

Manufacturer Part Number
BTA16-800SW3G
Description
58T1371
Manufacturer
ON Semiconductor
Datasheet

Specifications of BTA16-800SW3G

Rohs Compliant
YES
Peak Repetitive Off-state Voltage, Vdrm
800V
Gate Trigger Current Max (qi), Igt
10mA
On State Rms Current It(rms)
16A
Peak Non Rep Surge Current Itsm 50hz
170A
Holding Current Max Ih
20mA
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Peak Repetitive Blocking Current
Peak On-State Voltage (Note 2)
Gate Trigger Current (Continuous dc) (V
Holding Current
Latching Current (V
Gate Trigger Voltage (V
Gate Non−Trigger Voltage (T
Rate of Change of Commutating Current, See Figure 10.
Critical Rate of Rise of On−State Current
Critical Rate of Rise of Off-State Voltage
(V
(I
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(Gate Open, T
(T
(V
TM
J
D
D
D
= 110°C, f = 120 Hz, I
= Rated V
= 12 V, Gate Open, Initiating Current = ±500 mA)
= 0.66 x V
= ± 22.5 A Peak)
DRM
J
DRM
= 110°C, No Snubber)
D
, V
, Exponential Waveform, Gate Open, T
= 12 V, I
RRM
D
Junction−to−Case (AC)
Junction−to−Ambient
= 12 V, R
G
; Gate Open)
J
= 20 mA, tr ≤ 100 ns)
G
= 110°C)
= 12 mA)
Characteristic
Characteristic
L
= 30 W)
D
(T
= 12 V, R
J
= 25°C unless otherwise noted; Electricals apply in both directions)
L
= 30 W)
http://onsemi.com
J
= 110°C)
2
T
T
J
J
= 25°C
= 110°C
Symbol
Symbol
(dI/dt)
I
R
R
dV/dt
I
dI/dt
DRM
V
V
V
RRM
I
T
qJC
qJA
GT
I
I
TM
GT
GD
H
L
L
/
c
Min
250
2.0
2.0
2.0
0.5
0.5
0.5
0.2
0.2
0.2
2.0
Value
2.13
Typ
260
60
0.005
Max
1.55
2.0
1.3
1.3
1.3
10
10
10
20
25
30
25
50
°C/W
A/ms
A/ms
V/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V
V

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