M29F400FB55M3F2 Micron Technology Inc, M29F400FB55M3F2 Datasheet - Page 33
M29F400FB55M3F2
Manufacturer Part Number
M29F400FB55M3F2
Description
Manufacturer
Micron Technology Inc
Datasheet
1.M29F400FB55M3F2.pdf
(67 pages)
Specifications of M29F400FB55M3F2
Cell Type
NOR
Density
4Mb
Access Time (max)
55ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
19/18Bit
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 125C
Package Type
SO W
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Automotive
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
20mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M29F400FB55M3F2
Manufacturer:
ST
Quantity:
220
Table 8.
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
Table 9.
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
Chip Erase
Block Erase (64 KBytes)
Erase Suspend Latency Time
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
tested.
and V
and V
tested.
and V
and V
CC
CC
CC
CC
.
.
after 100,000 program/erase cycles.
after 100,000 program/erase cycles.
Program/Erase Times and Program/Erase Endurance Cycles, M29F400F
Program/Erase Times and Program/Erase Endurance Cycles, M29F200F
Parameter
Parameter
—
—
—
—
—
—
100,000
20
—
—
—
—
—
—
100,000
20
Min
Min
6
0.8
20
11
6
3
—
—
3
0.8
20
11
4
2
—
—
Typical
Typical
30
6
25
200
—
15
—
—
15
6
25
200
—
8
—
—
Max
Max
s
s
µs
µs
s
s
cycles
years
s
s
µs
µs
s
s
cycles
years
Unit
Unit
33/67