TSM4ND50CP RO Taiwan Semiconductor

MOSFET Power 500V 4Amp N Channel Power MOSFET

TSM4ND50CP RO

Manufacturer Part Number

TSM4ND50CP RO

Description

MOSFET Power 500V 4Amp N Channel Power MOSFET

Manufacturer

Taiwan Semiconductor

Specifications of TSM4ND50CP RO

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.7 Ohms

Forward Transconductance Gfs (max / Min)

1.5 S

Drain-source Breakdown Voltage

500 V

Continuous Drain Current

3 A

Power Dissipation

45 W

Mounting Style

SMD/SMT

Package / Case

TO-252

Fall Time

4.5 S

Gate Charge Qg

12 nC

Rise Time

9 nS

Lead Free Status / Rohs Status

Details

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