SCH1331-TL-H ON Semiconductor, SCH1331-TL-H Datasheet
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SCH1331-TL-H
Manufacturer Part Number
SCH1331-TL-H
Description
MOSFET Power SWITCHING DEVICE
Manufacturer
ON Semiconductor
Datasheet
1.SCH1331-TL-H.pdf
(4 pages)
Specifications of SCH1331-TL-H
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SCH1331-TL-H
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
SCH1331-TL-H
Manufacturer:
ON Semiconductor
Quantity:
5 550
Part Number:
SCH1331-TL-H
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENA1530
SCH1331
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : YG
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Halogen free compliance.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
V DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GSS
I D
I DP
P D
Tch
Tstg
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Symbol
Symbol
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
I D =--1mA, V GS =0V
V DS =--12V, V GS =0V
V GS =±8V, V DS =0V
V DS =--6V, I D =--1mA
V DS =--6V, I D =--1.5A
I D =--1.5A, V GS =--4.5V
I D =--0.8A, V GS =--2.5V
I D =--0.3A, V GS =--1.8V
SCH1331
Conditions
Conditions
2
×0.8mm)
81909PE TK IM TC-00002017
DATA SHEET
min
- -0.4
--12
2.7
Ratings
typ
Ratings
135
4.5
64
90
Continued on next page.
--55 to +150
max
- -1.3
--12
±10
--12
--10
±10
150
126
230
- -3
84
No. A1530-1/4
1
Unit
Unit
mΩ
mΩ
mΩ
°C
°C
μA
μA
W
A
A
S
V
V
V
V