FDS6986S Fairchild Semiconductor, FDS6986S Datasheet - Page 8

• Manufacturer Part Number: FDS6986S
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDS6986S

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±16V
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6986S.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 23. Non-SyncFET (FDS6690A) body
Figure 22. FDS6986S SyncFET body diode
reverse recovery characteristic.
diode reverse recovery characteristic.
10nS/DIV
10nS/DIV
(continued) This section copied from FDS6984S datasheet
0V
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
leakage versus drain-source voltage and
Figure 24. SyncFET body diode reverse
0.00001
0.0001
0.001
0.01
0.1
0
temperature.
V
DS
, REVERSE VOLTAGE (V)
10
125
25
o
o
C
C
20
FDS6986S Rev C1 (W)
30