VQ2001J Vishay, VQ2001J Datasheet - Page 4

• Manufacturer Part Number: VQ2001J
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of VQ2001J

• Number Of Elements: 4
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 2Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 600mA
• Power Dissipation: 1.3W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 14
• Package Type: PDIP
• Lead Free Status / Rohs Status: Not Compliant

VP0300L/LS, VQ2001J/P
Vishay Siliconix
www.vishay.com
11-4
Front View:
0.01
VP0300LS
3.0
2.5
2.0
1.5
1.0
VP0300L
0.1
0
0300LS
1
“S” VP
“S” VP
0300L
0
xxyy
xxyy
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
On-Resistance vs. Gate-to-Source Voltage
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only)
–4
V
0.01
Single Pulse
I
GS
D
= –0.2 A
– Gate-to-Source Voltage (V)
–8
I
D
= –0.5 A
1
–12
Top View:
VP0300LS
VQ2001J
“S”f//xxyy
“S”f//xxyy
VQ2001P
VQ2001J
–16
t
1
_
– Square Wave Pulse Duration (sec)
–20
10
“S” = Siliconix Logo
f = Factory Code
ll = Lot Traceability
xxyy = Date Code
–10 K
–100
–1 K
–10
100
–1
–1.0
V
–1.5
DS
= –10 V
100_C
V
T
GS
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
J
P
–2.0
Threshold Region
= 150_C
DM
– Gate-Source Voltage (V)
JM
– T
t
1
1 K
A
= P
–2.5
t
2
DM
Z
thJA
thJA
S-04279—Rev. E, 16-Jul-01
t
t
1
2
Document Number: 70217
–3.0
(t)
= 156
_
–55_C
C/W
–3.5
25_C
10 K
–4.0