FDB6035AL Fairchild Semiconductor, FDB6035AL Datasheet
FDB6035AL
Manufacturer Part Number
FDB6035AL
Description
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet
1.FDB6035AL.pdf
(5 pages)
Specifications of FDB6035AL
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.012Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
48A
Power Dissipation
52W
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-263AB
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB6035AL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP6035AL/FDB6035AL
N-Channel Logic Level PowerTrench
General Description
This N-Channel Logic Level MOSFET has been
designed specifically to improve the overall efficiency of
DC/DC
conventional switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
It has been optimized for low gate charge, low R
and fast switching speed.
G
2003 Fairchild Semiconductor Corporation
DS(ON)
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
D
, T
JC
JA
Device Marking
S
STG
specifications.
FDB6035AL
FDP6035AL
converters
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
using
TO-220
FDP Series
either
– Continuous
– Pulsed
FDB6035AL
FDP6035AL
Device
Parameter
synchronous
C
G
Derate above 25 C
= 25 C
T
S
A
DS(ON)
=25
or
o
C unless otherwise noted
Reel Size
Tube
13’’
(Note 1)
MOSFET
TO-263AB
FDB Series
D
Features
48 A, 30 V
Critical DC electrical parameters specified at
elevated temperature
High performance trench technology for extremely
low R
175 C maximum junction temperature rating
DS(ON)
Tape width
R
R
DS(ON)
DS(ON)
–65 to +175
24mm
Ratings
n/a
62.5
180
0.3
2.9
30
48
52
= 12 m @ V
= 14 m @ V
20
G
FDP6035AL/FDB6035AL Rev D(W)
S
D
GS
GS
July 2003
= 10 V
= 4.5 V
Quantity
800 units
45
Units
W/ C
C/W
W
V
V
A
C
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FDB6035AL Summary of contents
Page 1
... TO-263AB FDB Series o T =25 C unless otherwise noted A (Note Derate above 25 C Reel Size 13’’ Tube July 2003 DS(ON 4.5 V DS(ON Ratings Units 180 –65 to +175 C 2.9 C/W 62.5 Tape width Quantity 24mm 800 units n/a 45 FDP6035AL/FDB6035AL Rev D(W) ...
Page 2
... A Test Conditions (Note 250 250 A, Referenced 250 250 A, Referenced 4 =125 10V 1.0 MHz mV 1.0 MHz 15V GEN (Note 100 A/µ Min Typ Max Units mV 100 mV/ C –5 7 1250 pF 330 pF 155 pF 1 4 0.92 1 FDP6035AL/FDB6035AL Rev D(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 24A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6035AL/FDB6035AL Rev D(W) 100 10 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.001 0. TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 2.9°C 25°C A 0.0001 0.001 0.01 0 TIME (sec) 1 Power Dissipation. R ( 2.9 °C Duty Cycle 0.1 FDP6035AL/FDB6035AL Rev D( ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...