IRF7495 International Rectifier, IRF7495 Datasheet - Page 2

• Manufacturer Part Number: IRF7495
• Manufacturer: International Rectifier
• Type: Power MOSFETr

Specifications of IRF7495

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.022Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 7.3A
• Power Dissipation: 2.5W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Lead Free Status / Rohs Status: Not Compliant

IRF7495
V
∆V
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
t
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
AS
SD
g
gs
gd
rr
2
(BR)DSS
eff.
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
J
Parameter
= 25°C (unless otherwise specified)
Ù
Parameter
Parameter
Parameter
Ù
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
–––
–––
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–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
11
1530
0.10
11.7
–––
–––
–––
–––
–––
–––
–––
250
110
980
160
240
–––
–––
–––
6.3
8.7
18
34
13
10
36
42
73
Typ.
-200
–––
–––
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
2.3
1.3
22
20
51
58
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 4.4A
= 4.4A
= 25°C, I
= 25°C, I
= 6.2Ω
= 0V, I
= 10V, I
= V
= 100V, V
= 80V, V
= 20V
= -20V
= 25V, I
= 50V
= 10V
= 50V
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
180
, I
4.4
D
f
f
Conditions
Conditions
Conditions
D
S
F
DS
D
D
DS
DS
= 250µA
GS
= 250µA
= 4.4A, V
= 4.4A, V
= 4.4A
= 4.4A
GS
= 0V to 80V
= 1.0V, ƒ = 1.0MHz
= 80V, ƒ = 1.0MHz
= 0V, T
f
= 0V
www.irf.com
D
f
= 1mA
G
DD
J
GS
= 125°C
= 25V
= 0V
g
Units
mJ
A
f
D
S