M29W160DB90N1 Micron Technology Inc, M29W160DB90N1 Datasheet
M29W160DB90N1
Specifications of M29W160DB90N1
Available stocks
Related parts for M29W160DB90N1
M29W160DB90N1 Summary of contents
Page 1
... PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29W160DT: 22C4h – Bottom Device Code M29W160DB: 2249h June 2002 16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages TFBGA48 (ZA) M29W160DT M29W160DB SO44 (M) TSOP48 ( 20mm ...
Page 2
M29W160DT, M29W160DB TABLE OF CONTENTS SUMMARY DESCRIPTION ...
Page 3
Erase Resume Command ...
Page 4
... Table 19. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 APPENDIX A. BLOCK ADDRESS TABLE Table 20. Top Boot Block Addresses, M29W160DT Table 21. Bottom Boot Block Addresses, M29W160DB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 APPENDIX B. COMMON FLASH INTERFACE (CFI Table 22. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 23. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Table 24. CFI Query System Interface Information Table 25. Device Geometry Definition Table 26 ...
Page 5
SUMMARY DESCRIPTION The M29W160D Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be per- formed using a single low voltage (2.7 to 3.6V) supply. On power-up the ...
Page 6
M29W160DT, M29W160DB Figure 3. SO Connections A18 2 43 A17 M29W160DT ...
Page 7
Figure 5. TFBGA Connections (Top view through package A17 A18 ...
Page 8
M29W160DT, M29W160DB Figure 6. Block Addresses (x8) M29W160DT Top Boot Block Addresses (x8) 1FFFFFh 16 KByte 1FC000h 1FBFFFh 8 KByte 1FA000h 1F9FFFh 8 KByte 1F8000h 1F7FFFh 32 KByte 1F0000h 1EFFFFh 64 KByte 1E0000h 01FFFFh 64 KByte 010000h 00FFFFh 64 KByte ...
Page 9
Figure 7. Block Addresses (x16) M29W160DT Top Boot Block Addresses (x16) FFFFFh 8 KWord FE000h FDFFFh 4 KWord FD000h FCFFFh 4 KWord FC000h FBFFFh 16 KWord F8000h F7FFFh 32 KWord F0000h 0FFFFh 32 KWord 08000h 07FFFh 32 KWord 00000h Note: ...
Page 10
M29W160DT, M29W160DB SIGNAL DESCRIPTIONS See Figure 2, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to ...
Page 11
BUS OPERATIONS There are five standard bus operations that control the device. These are Bus Read, Bus Write, Out- put Disable, Standby and Automatic Standby. See Tables 2 and 3, Bus Operations, for a summary. Typically glitches of less than ...
Page 12
M29W160DT, M29W160DB Table 3. Bus Operations, BYTE = V Operation Bus Read Bus Write IL IH Output Disable Standby Read Manufacturer Code ...
Page 13
After the program operation has completed the memory will return to the Read mode, unless an error has occurred. When an error occurs the memory will continue to output the Status Regis- ter. A Read/Reset command must be issued to ...
Page 14
... Read CFI Query Command. The Query Command is used to read data from the Common Flash Interface (CFI) Memory Area. This command is valid when the device is in the Read Array mode, or when the device is in Autoselected mode ...
Page 15
Table 4. Commands, 16-bit mode, BYTE = V Command 1st Addr Data Read/Reset 3 555 AA Auto Select 3 555 AA Program 4 555 AA Unlock Bypass 3 555 AA Unlock Bypass Program Unlock ...
Page 16
M29W160DT, M29W160DB Table 5. Commands, 8-bit mode, BYTE = V Command 1st Addr Data Read/Reset 3 AAA AA Auto Select 3 AAA AA Program 4 AAA AA Unlock Bypass 3 AAA AA Unlock Bypass ...
Page 17
Table 6. Program, Erase Times and Program, Erase Endurance Cycles Parameter Chip Erase Block Erase (64 Kbytes) Program (Byte or Word) Chip Program (Byte by Byte) Chip Program (Word by Word) Program/Erase Cycles (per Block) Note ...
Page 18
M29W160DT, M29W160DB Bit is set to ’0’ and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read. Alternative Toggle Bit (DQ2). The Toggle ...
Page 19
Figure 8. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL MAXIMUM RATING Stressing the device above ...
Page 20
M29W160DT, M29W160DB DC AND AC PARAMETERS This section summarizes the operating measure- ment conditions, and the DC and AC characteris- tics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests performed ...
Page 21
Table 11. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) CC2 Supply Current (1) I CC3 (Program/Erase) V Input Low Voltage IL V Input High ...
Page 22
M29W160DT, M29W160DB Figure 12. Read Mode AC Waveforms A0-A19/ A– DQ0-DQ7/ DQ8-DQ15 BYTE tELBL/tELBH Table 12. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid ...
Page 23
Figure 13. Write AC Waveforms, Write Enable Controlled A0-A19/ A–1 tAVWL E tELWL G tGHWL W DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Table 13. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Address Valid to Next Address Valid ...
Page 24
M29W160DT, M29W160DB Figure 14. Write AC Waveforms, Chip Enable Controlled A0-A19/ A–1 tAVEL W tWLEL G tGHEL E DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Table 14. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Address Valid to Next ...
Page 25
Figure 15. Reset/Block Temporary Unprotect AC Waveforms tPLPX RP Table 15. Reset/Block Temporary Unprotect AC Characteristics Symbol Alt (1) t PHWL RP High to Write Enable Low, Chip Enable Low PHEL RH Output Enable ...
Page 26
M29W160DT, M29W160DB PACKAGE MECHANICAL SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package Outline Note: Drawing is not to scale. SO44 – 44 lead Plastic Small Outline, 525 mils body width, Package ...
Page 27
TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Outline 1 N/2 TSOP-a Note: Drawing is not to scale. TSOP48 – 48 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ A A1 ...
Page 28
M29W160DT, M29W160DB Figure 16. TFBGA48 8x9mm - 6x8 ball array, 0.80 mm pitch, Package Outline BALL ”A1” Table 16. TFBGA48 8x9mm - 6x8 ball array, 0.80 mm pitch, Package Mechanical Data millimeters Symbol Typ ...
Page 29
Figure 17. TFBGA48 Daisy Chain - Package Connections (Top view through package Figure 18. TFBGA48 Daisy Chain - PCB Connections (Top view through package) START POINT ...
Page 30
M29W160DT, M29W160DB PART NUMBERING Table 17. Ordering Information Scheme Example: Device Type M29 Operating Voltage 2.7 to 3.6V CC Device Function 160D = 16 Mbit (x8/x16), Boot Block Array Matrix T = Top Boot B = ...
Page 31
REVISION HISTORY Table 19. Document Revision History Date Version First Issue: originates from M29W160B datasheet dated February 2000 with “B” revision July 2000 -01 changed to “D” and erase program times modified 12-Jan-2001 -02 Document type: from Product Preview to ...
Page 32
M29W160DT, M29W160DB APPENDIX A. BLOCK ADDRESS TABLE Table 20. Top Boot Block Addresses, M29W160DT Size Address Range Address Range # (Kbytes) (x8 1FC000h-1FFFFFh FE000h-FFFFF 1FA000h-1FBFFFh FD000h-FDFFFh 32 8 1F8000h-1F9FFFh FC000h-FCFFFh 31 32 1F0000h-1F7FFFh F8000h-FBFFFh 30 ...
Page 33
... APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...
Page 34
M29W160DT, M29W160DB Table 24. CFI Query System Interface Information Address Data x16 1Bh 36h 0027h bit bit 1Ch 38h 0036h bit bit ...
Page 35
... Table 25. Device Geometry Definition Address Data x16 x8 27h 4Eh 0015h Device Size = 2 28h 50h 0002h Flash Device Interface Code description 29h 52h 0000h 2Ah 54h 0000h Maximum number of bytes in multi-byte program or page = 2 2Bh 56h 0000h Number of Erase Block Regions within the device. ...
Page 36
M29W160DT, M29W160DB Table 26. Primary Algorithm-Specific Extended Query Table Address Data x16 x8 40h 80h 0050h 41h 82h 0052h Primary Algorithm extended Query table unique ASCII string “PRI” 42h 84h 0049h 43h 86h 0031h Major version number, ASCII 44h 88h ...
Page 37
... RP. This can be achieved without violating the maximum ratings of the components on the micro- processor bus, therefore this technique is suitable for use after the Flash has been fitted to the sys- tem. To protect a block follow the flowchart in Figure 21, In-System Block Protect Flowchart. To unprotect ...
Page 38
M29W160DT, M29W160DB Figure 19. Programmer Equipment Block Protect Flowchart ADDRESS = BLOCK ADDRESS 38/42 START Wait Wait ...
Page 39
Figure 20. Programmer Equipment Chip Unprotect Flowchart ADDRESS = CURRENT BLOCK ADDRESS NO ++n = 1000 YES FAIL M29W160DT, M29W160DB START PROTECT ALL BLOCKS CURRENT BLOCK = 0 ...
Page 40
M29W160DT, M29W160DB Figure 21. In-System Equipment Block Protect Flowchart ADDRESS = BLOCK ADDRESS ADDRESS = BLOCK ADDRESS ...
Page 41
Figure 22. In-System Equipment Chip Unprotect Flowchart ++ 1000 YES ISSUE READ/RESET COMMAND FAIL START PROTECT ALL BLOCKS CURRENT BLOCK = WRITE 60h ANY ADDRESS WITH ...
Page 42
M29W160DT, M29W160DB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from ...