LH28F800BVE-TTL90 Sharp Electronics, LH28F800BVE-TTL90 Datasheet - Page 4

• Manufacturer Part Number: LH28F800BVE-TTL90
• Manufacturer: Sharp Electronics

Specifications of LH28F800BVE-TTL90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

SHARP’s LH28F800BVE-TTL90 Flash memory with Smart3 technology is a high-density, low-cost, nonvolatile, read/write
storage solution for a wide range of applications. LH28F800BVE-TTL90 can operate at V
Its low voltage operation capability realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, flexible voltage and extended cycling provide for highly flexible
component suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal
solution for code + data storage applications. For secure code storage applications, such as networking, where code is either
directly executed out of flash or downloaded to DRAM, the LH28F800BVE-TTL90 offers two levels of protection: absolute
protection with V
code security needs.
The LH28F800BVE-TTL90 is manufactured on SHARP’s 0.35µm ETOX
standard package: the 48-lead TSOP ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
Smart3 Technology
User-Configurable ×8 or ×16 Operation
High-Performance Access Time
Operating Temperature
Optimized Array Blocking Architecture
Extended Cycling Capability
Enhanced Automated Suspend Options
2.7V-3.6V V
2.7V-3.6V or 11.4V-12.6V V
90ns(2.7V-3.6V)
0°C to +70°C
Two 4K-word Boot Blocks
Six 4K-word Parameter Blocks
Fifteen 32K-word Main Blocks
Top Boot Location
100,000 Block Erase Cycles
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
PP
at GND, selective hardware boot block locking. These alternatives give designers ultimate control of their
CC
8M-BIT (1Mbit × 8 / 512Kbit × 16)
Smart3 Flash MEMORY
LH28F800BVE-TTL90
PP
Automated Word/Byte Write and Block Erase
Enhanced Data Protection Features
Low Power Management
SRAM-Compatible Write Interface
Industry-Standard Packaging
ETOX
CMOS Process (P-type silicon substrate)
Not designed or rated as radiation hardened
Absolute Protection with V
Block Erase and Word/Byte Write Lockout
during Power Transitions
Boot Blocks Protection with WP#=V
Command User Interface
Status Register
Deep Power-Down Mode
Automatic Power Savings Mode Decreases
I
48-Lead TSOP
CC
TM*
TM*
in Static Mode
process technology. It come in industry-
Nonvolatile Flash Technology
CC
=2.7V-3.6V and V
PP
=GND
PP
=2.7V-3.6V.
Rev. 1.1
IL