LH28F008SAT-12 Sharp Electronics, LH28F008SAT-12 Datasheet - Page 23

• Manufacturer Part Number: LH28F008SAT-12
• Manufacturer: Sharp Electronics

Specifications of LH28F008SAT-12

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 120ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

8M (1M × 8) Flash Memory
ALTERNATIVE CE
NOTE:
1. Chip-Enable Controlled Writes: Write operations are driven by the valid combinations of CE
2. Sampled, not 100% tested.
3. Refer to Command Definitions Table for valid A
4. Refer to Command Definitions Table for valid D
5. Byte write and block erase durations are measured to completion (SR.7 = 1, RY
6. See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing characteristics.
7. See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
t
t
t
t
t
t
tDVEH
t
t
t
t
t
t
t
t
EHOV1
EHOV2
t
EHWH
WLEL
VPEH
AVEH
EHDX
EHAX
EHGL
AVAV
PHEL
ELEH
EHEL
EHRL
QVVL
CE
measured relative to the CE
determination of byte write/block erase success (SR.3/4/5 = 0).
SYMBOL
»
defines the write pulsewidth (within a longer WE
t
t
t
t
t
t
t
t
t
t
t
VPS
t
EPH
VPH
WC
WS
WH
DH
PS
CP
AS
DS
AH
Write Cycle Time
PWD High Recovery to CE
Going Low
WE Setup to CE
CE
V
Address Setup to CE
High
Data Setup to CE
Data Hold from CE
Address Hold from CE
WE Hold from CE
CE
CE
Going Low
Duration of Byte Write
Operation
Duration of Block Erase
Operation
Write Recovery before Read
V
RY
PP
PP
»
»
»
»
/ BY
Pulse Width
Pulse Width High
High to RY
Setup to CE
Hold from Valid SRD,
»
»
PARAMETER
- CONTROLLED WRITES
High
»
waveform.
»
/ BY
»
»
»
Going Low
Going High
Going High
»
High
»
»
High
»
Going
»
High
IN
IN
»
for byte write or block erasure.
for byte write or block erasure.
»
LH28F008SA-85
timing waveform), all setup, hold and inactive WE
MIN.
100
0.3
85
50
40
40
25
1
0
5
5
0
6
0
0
V
CC
± 5%
MAX.
100
6
LH28F008SA-85
MIN.
100
0.3
90
50
40
40
25
1
0
5
5
0
6
0
0
V
»
CC
/ BY
± 10%
»
= V
MAX.
100
OH
). V
»
and WE
7
PP
LH28F008SA-12
should be held at V
MIN.
120
100
0.3
50
40
40
25
1
0
5
5
0
6
0
»
0
. In systems where
V
CC
»
times should be
± 10%
MAX.
100
7
PPH
LH28F008SA
UNIT NOTE
until
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
µs
s
2, 5
2
2
3
4
5
5
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