5962-3829413MZA E2V, 5962-3829413MZA Datasheet - Page 43

• Manufacturer Part Number: 5962-3829413MZA
• Manufacturer: E2V

Specifications of 5962-3829413MZA

• Lead Free Status / Rohs Status: Supplier Unconfirmed

DSCC FORM 2234
APR 97
the SEC or alternate SEP test vehicle as approved by the qualifying activity at initial qualification and after any design or process
changes which may affect the upset or latch-up characteristics. Test four devices with zero failures. ASTM standard F1192 may
be used as a guideline when performing SEP testing. The test conditions for SEP are as follows:
be supplied.
5. PACKAGING
Q and V or MIL-PRF-38535, appendix A for device class M.
(original equipment), design applications, and logistics purposes.
prepared specification or drawing.
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone [phone].
[phone].
4.4.4.2 Single event phenomena (SEP). SEP testing shall be required on class V devices. SEP testing shall be performed on
4.4.4.3 Additional information. When specified in the purchase order or contract, a copy of the following additional data shall
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
6.4 Comments. Comments on this drawing should be directed to DSCC-VA , Columbus, Ohio 43218-3990, or telephone
a.
b.
c.
d.
e.
f.
a.
b.
c.
d.
e.
g. For SEP test limits, see table IB herein.
DEFENSE SUPPLY CENTER COLUMBUS
The ion beam angle of incidence shall be normal to the die surface and 60° to the normal, inclusive (i.e., 0° ≤ angle ≤
60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
The fluence shall be greater than 100 errors or ≥ 10 7 ions/cm 2 .
The flux shall be between 10 2 and 10 5 ion/cm 2 /s. The cross section shall be verified to be flux independent by
measuring the cross section at two flux rates which differ by at least an order of magnitude.
The particle range shall be ≥ 20 microns in silicon.
The test temperature shall be +25°C and the maximum rated operating temperature ±10°C.
Bias conditions shall be V CC = 4.5 V dc for the upset measurements and V CC = 5.5 V dc for the latch-up
measurements.
RHA upset levels.
Test conditions (SEP).
Number of upsets (SEP).
Number of transients (SEP).
Occurrence of latch-up (SEP).
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
SIZE
A
REVISION LEVEL
H
SHEET
5962-38294
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