CY62126BVLL-55ZI Cypress Semiconductor Corp, CY62126BVLL-55ZI Datasheet

CY62126BVLL-55ZI

Manufacturer Part Number
CY62126BVLL-55ZI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62126BVLL-55ZI

Density
1Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
16b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
20mA
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
64K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62126BVLL-55ZI
Manufacturer:
CY
Quantity:
2 851
Part Number:
CY62126BVLL-55ZI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Features
Functional Description
The CY62126BV is a high-performance CMOS static RAM or-
ganized as 65,536 words by 16 bits. This device has an auto-
matic power-down feature that significantly reduces power
consumption by 99% when deselected. The device enters
power-down mode when CE is HIGH.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
Cypress Semiconductor Corporation
• 2.7V–3.6V operation
• CMOS for optimum speed/power
• Low active power (70 ns, LL version)
• Low standby power (70 ns, LL version)
• Automatic power-down when deselected
• Independent control of Upper and Lower Bytes
• Available in 44-pin TSOP II (forward) and fBGA
A
A
A
Logic Block Diagram
A
A
A
A
A
A
A
10
12
11
— 54 mW (max.) (15 mA)
— 54 W (max.) (15 A)
7
6
3
2
1
0
9
COLUMN DECODER
DATA IN DRIVERS
1024 X 1024
RAM Array
64K x 16
3901 North First Street
I/O
I/O
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip En-
able (CE) and Output Enable (OE) LOW while forcing the write
enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then
data from the memory location specified by the address pins
will appear on I/O
then data from memory will appear on I/O
truth table at the back of this data sheet for a complete descrip-
tion of read and write modes.
The input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE
are disabled (BHE, BLE HIGH), or during a write operation (CE
LOW, and WE LOW).
The CY62126BV is available in standard 44-pin TSOP Type II
(forward pinout) and fBGA packages.
1
9
– I/O
– I/O
BHE
WE
CE
OE
BLE
62126BV–1
8
16
15
San Jose
). If Byte High Enable (BHE) is LOW, then data
1
9
64K x 16 Static RAM
to I/O
through I/O
Pin Configurations
I/O
I/O
I/O
I/O
V
I/O
I/O
I/O
I/O
V
A
A
A
A
WE
8
NC
CE
CC
A
A
A
A
A
SS
. If Byte High Enable (BHE) is LOW,
15
14
13
12
TSOP II (Forward)
4
3
2
1
0
1
2
3
4
5
6
7
8
1
CA 95134
through I/O
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
10
11
12
Top View
16
0
) is written into the location
through A
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
CY62126BV
62126BV–2
16
A
A
A
OE
BHE
BLE
I/O
I/O
I/O
I/O
V
V
I/O
I/O
I/O
I/O
NC
A
A
A
A
NC
9
) are placed in a
1
5
6
7
SS
CC
8
9
10
11
15
to I/O
16
15
14
13
12
11
10
9
through I/O
).
June 14, 2000
408-943-2600
16
. See the
8
), is
0
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Related parts for CY62126BVLL-55ZI

CY62126BVLL-55ZI Summary of contents

Page 1

... COLUMN DECODER Cypress Semiconductor Corporation (BLE) is LOW, then data from I/O pins (I/O written into the location specified on the address pins (A through Byte High Enable (BHE) is LOW, then data 15 from I/O pins (I/O specified on the address pins (A Reading from the device is accomplished by taking Chip En- able (CE) and Output Enable (OE) LOW while forcing the write enable (WE) HIGH ...

Page 2

Pin Configurations (continued) Selection Guide Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. – +150 C Ambient ...

Page 3

Electrical Characteristics Over the Operating Range Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH [1] V Input LOW Voltage IL I Input Load Current IX I Output Leakage Current OZ I ...

Page 4

Switching Characteristics Over the Operating Range Parameter READ CYCLE t Read Cycle Time RC t Address to Data Valid AA t Data Hold from Address Change OHA t CE LOW to Data Valid ACE t OE LOW to Data ...

Page 5

Data Retention Characteristics Parameter Description V V for Data Retention Data Retention Current CCDR [4] t Chip Deselect to Data Retention Time CDR t Operation Recovery Time R Data Retention Waveform Switching Waveforms [10, ...

Page 6

Switching Waveforms (continued) [13, 14] Write Cycle No. 1 (CE Controlled) ADDRESS BHE, BLE WE DATA I/O Write Cycle No. 2 (WE Controlled, OE HIGH During Write) ADDRESS BHE, BLE OE t HZOE ...

Page 7

Switching Waveforms (continued) Write Cycle No.3 (WE Controlled, OE LOW) ADDRESS BHE, BLE t HZWE NOTE 15 DATAI/O Truth Table BLE BHE High ...

Page 8

... Ordering Information Speed (ns) Ordering Code 55 CY62126BVLL-55ZI CY62126BVLL-55BAI 70 CY62126BVLL-70ZI CY62126BVLL-70BAI Document #: 38-00584-** Package Diagrams Package Name Package Type Z44 44-Lead TSOP II BA48 48-ball Fine Pitch Ball Grid Array Z44 44-Lead TSOP II BA48 48-ball Fine Pitch Ball Grid Array 44-Pin TSOP II Z44 8 CY62126BV ...

Page 9

... Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

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