CY2309NZSI-1H Cypress Semiconductor Corp, CY2309NZSI-1H Datasheet - Page 2

• Manufacturer Part Number: CY2309NZSI-1H
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY2309NZSI-1H

• Number Of Outputs: 9
• Operating Supply Voltage (max): 3.6V
• Operating Temp Range: -40C to 85C
• Propagation Delay Time: 9.2ns
• Operating Supply Voltage (min): 3V
• Mounting: Surface Mount
• Pin Count: 16
• Operating Supply Voltage (typ): 3.3V
• Package Type: SOIC
• Quiescent Current: 32uA
• Input Frequency: 133.33MHz
• Duty Cycle: 60%
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Not Compliant

Pinouts
Table 1. Pin Description for CY2309NZ
Maximum Ratings
Supply Voltage to Ground Potential................–0.5V to +7.0V
DC Input Voltage (Except REF) ............ –0.5V to V
DC Input Voltage REF .........................................–0.5V to 7V
Operating Conditions
Electrical Characteristics
Document #: 38-07182 Rev. *E
Notes
4, 8, 13
5, 9, 12
1
2, 3, 6, 7, 10,
11, 14, 15, 16
V
T
C
C
BUF_IN, OUTPUT [1:9] Operating Frequency
t
V
V
I
I
V
V
I
PU
IL
IH
DD
1. BUF_IN input has a threshold voltage of V
2. Parameter is guaranteed by design and characterization. It is not 100% tested in production.
Parameter
A
DD
IL
IH
OL
OH
L
IN
Pin
Parameter
Input LOW Voltage
Input HIGH Voltage
Input LOW Current
Input HIGH Current
Output LOW Voltage
Output HIGH Voltage
Supply Current
V
GND
BUF_IN
OUTPUT [1:9]
DD
Description
Supply Voltage
(Ambient Operating Temperature) Commercial
(Ambient Operating Temperature) Industrial
Load Capacitance, Fout < 100 MHz
Load Capacitance,100 MHz < Fout < 133.33 MHz
Input Capacitance
Power up time for all VDDs to reach minimum specified
voltage (power ramps must be monotonic)
Signal
for Commercial and Industrial Temperature Devices
[1]
[1]
[2]
[2]
DD
for Commercial and Industrial Temperature Devices
/2.
3.3V Digital Voltage Supply
Ground
Input Clock
Outputs
Figure 1. CY2309NZ - 16 SOIC-Top View
OUTPUT1
OUTPUT2
OUTPUT3
OUTPUT4
V
V
I
I
Unloaded outputs at 66.66 MHz
OL
OH
Description
IN
IN
BUF_IN
DD
= 8 mA
= 0V
= V
= –8 mA
GND
V
V
DD
DD
+ 0.5V
DD
Test Conditions
1
2
3
4
5
6
7
8
Storage Temperature ................................. –65
Junction Temperature ................................................. 150
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ............................ >2,000V
15
14
13
12
11
10
16
9
OUTPUT9
OUTPUT8
OUTPUT7
V
GND
OUTPUT6
OUTPUT5
GND
DD
Description
0.05
Min
Min
–40
DC
2.0
2.4
3.0
0
133.33
100.0
Max
Max
50.0
3.6
0.8
0.4
70
85
30
15
50
32
7
CY2309NZ
°
C to +150
MHz
Unit
Unit
mA
ms
μA
μA
°
°
pF
pF
pF
V
V
V
V
V
C
C
Page 2 of 6
°
°
C
C
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