CY62128BLL-70SI Cypress Semiconductor Corp, CY62128BLL-70SI Datasheet - Page 5

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CY62128BLL-70SI

Manufacturer Part Number
CY62128BLL-70SI
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY62128BLL-70SI

Density
1Mb
Access Time (max)
70ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
17b
Package Type
SOIC
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
15mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY62128BLL-70SI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY62128BLL-70SI
Quantity:
6
Document #: 38-05300 Rev. *C
Switching Characteristics
Switching Waveforms
Read Cycle No.1
Notes:
10. The internal write time of the memory is defined by the overlap of CE
11. No input may exceed V
12. Device is continuously selected. OE, CE
13. WE is HIGH for read cycle.
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
7.
8.
9.
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
Parameter
DATA OUT
ADDRESS
Test conditions assume signal transition time of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
t
At any given temperature and voltage condition, t
and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates
the write.
OL
HZOE
/I
OH
, t
HZCE
and 100-pF load capacitance.
, and t
[10]
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE
CE
CE
CE
Write Cycle Time
CE
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
HZWE
[12, 13]
1
1
1
1
1
1
are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.
LOW to Data Valid, CE
LOW to Low Z, CE
HIGH to High Z, CE
LOW to Power-up, CE
HIGH to Power-down, CE
LOW to Write End, CE
CC
+ 0.5V.
PREVIOUS DATA VALID
[7]
1
Over the Operating Range
= V
[9]
[8, 9]
[7, 9]
IL
, CE
t
Description
2
OHA
2
HZCE
HIGH to Low Z
2
LOW to High Z
= V
2
2
2
HIGH to Power-up
HIGH to Write End
is less than t
IH
HIGH to Data Valid
.
2
LOW to Power-down
t
AA
LZCE
1
[9]
, t
[8, 9]
LOW, CE
HZOE
is less than t
t
2
RC
HIGH, and WE LOW. CE
LZOE
, and t
HZWE
Min.
55
55
45
45
45
25
62128B-55
5
0
0
0
5
0
0
5
is less than t
1
and WE must be LOW and CE
Max.
55
55
20
20
20
55
20
LZWE
DATA VALID
for any given device.
Min.
70
70
60
60
50
30
62128B-70
5
0
5
0
0
0
0
5
2
CY62128B
HIGH to initiate a write,
Max.
70
70
35
25
25
70
25
MoBL
Page 5 of 11
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
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