CY7C1399B-20VC Cypress Semiconductor Corp, CY7C1399B-20VC Datasheet - Page 4

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CY7C1399B-20VC

Manufacturer Part Number
CY7C1399B-20VC
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1399B-20VC

Density
256Kb
Access Time (max)
20ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
15b
Package Type
SOJ
Operating Temp Range
0C to 70C
Number Of Ports
1
Supply Current
45mA
Operating Supply Voltage (min)
3V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
28
Word Size
8b
Number Of Words
32K
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1399B-20VC
Manufacturer:
CYPRESS
Quantity:
13 888
Document #: 38-05071 Rev. *D
Switching Characteristics
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Write Cycle
t
t
t
t
t
t
t
t
t
t
Notes:
10. The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
HZWE
LZWE
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
7. At any given temperature and voltage condition, t
8. t
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can
I
terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
OL
HZOE
Parameter
/I
OH
, t
and capacitance C
HZCE
[9, 10]
, t
HZWE
are specified with C
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
L
= 30 pF.
Over the Operating Range
L
= 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
[7]
[7]
Description
[7, 8]
[9]
[7]
[7, 8]
HZCE
is less than t
LZCE
, t
[6]
HZOE
is less than t
HZWE
LZOE
Min.
10
10
and t
3
0
3
0
8
7
0
0
7
5
0
3
1399B-10
, and t
SD
.
HZWE
Max.
10
10
10
5
5
5
7
is less than t
Min.
LZWE
12
12
3
0
0
0
0
3
0
8
8
8
7
3
1399B-12
for any given device.
CY7C1399B
Max.
12
12
12
5
5
6
7
Page 4 of 10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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