SI9430DY-T1 Vishay, SI9430DY-T1 Datasheet
SI9430DY-T1
Specifications of SI9430DY-T1
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SI9430DY-T1 Summary of contents
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... For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70124 S-00652—Rev. J, 27-Mar-00 I (A) D 5.8 4.9 4 P-Channel MOSFET Symbol stg Symbol R thJA www.vishay.com FaxBack 408-970-5600 Si9430DY Vishay Siliconix Limit Unit – 5.8 4 –2.4 2 1.6 –55 to 150 C Limit Unit 50 C/W 1 ...
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... Si9430DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b b On-State Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance b Diode Forward Voltage a Dynamic Total Gate Charge Gate-Source Charge ...
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... V 1000 10 V 500 On-Resistance vs. Junction Temperature 2 1.2 0.8 0 –50 –25 Si9430DY Vishay Siliconix Transfer Characteristics T = 125 –55 C 2.5 3.0 3.5 4.0 4.5 5.0 V – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – Drain-to-Source Voltage (V) ...
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... Si9430DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 A D 0.0 –0.4 –0.8 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...