SI6463DQ-T1 Vishay, SI6463DQ-T1 Datasheet - Page 4

• Manufacturer Part Number: SI6463DQ-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI6463DQ-T1

• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.017Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 6.2A
• Power Dissipation: 1.05W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: TSSOP
• Lead Free Status / Rohs Status: Not Compliant

Si6463ADQ
Vishay Siliconix
www.vishay.com
2-4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.2
- 0.4
0.4
0.2
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
-4
-4
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
Single Pulse
0
= 250 mA
T
Threshold Voltage
J
- Temperature (_C)
25
10
-3
50
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
New Product
-2
10
-1
10
1
-1
50
40
30
20
10
0
10
-2
Single Pulse Power, Junction-to-Ambient
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
-1
DM
JM
- T
t
1
A
Time (sec)
1
= P
t
2
DM
1
Z
thJA
thJA
100
S-00280—Rev. A, 21-Feb-00
t
t
1
2
Document Number: 71139
(t)
= 100_C/W
10
600
10
100