SI4894DY-T1 Vishay, SI4894DY-T1 Datasheet
SI4894DY-T1
Specifications of SI4894DY-T1
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SI4894DY-T1 Summary of contents
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... Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71162 S-50692—Rev. E, 11-Apr-05 FEATURES D TrenchFETr Power MOSFET I (A) D Lead (Pb)-Free Version is RoHS Compliant D 12.5 10.2 SO Top View Si4894DY-T1—E3 (Lead (Pb)-Free) = 25_C UNLESS OTHERWISE NOTED) A Symbol 25_C 70_C ...
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... Si4894DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... V − Source-to-Drain Voltage (V) SD Document Number: 71162 S-50692—Rev. E, 11-Apr-05 1400 1200 1000 25_C J 0.8 1.0 1.2 Si4894DY Vishay Siliconix Capacitance C iss 800 600 C oss 400 C rss 200 − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 12 ...
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... Si4894DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...