CAT28C16AK-20 ON Semiconductor, CAT28C16AK-20 Datasheet - Page 3

• Manufacturer Part Number: CAT28C16AK-20
• Manufacturer: ON Semiconductor

Specifications of CAT28C16AK-20

• Density: 16Kb
• Interface Type: Parallel
• Organization: 2Kx8
• Access Time (max): 200ns
• Write Protection: Yes
• Data Retention: 100Year
• Operating Supply Voltage (typ): 5V
• Package Type: SOIC EIAJ
• Operating Temp Range: 0C to 70C
• Supply Current: 35mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 24
• Lead Free Status / Rohs Status: Not Compliant

4. This parameter is tested initially and after a design or process change that affects the parameter.
5. For the CAT28C16A−20, the minimum endurance is 10,000 cycles and the minimum data retention is 10 years.
6. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
7. V
8. V
9. This parameter is tested initially and after a design or process change that affects the parameter.
10. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
Table 4. RELIABILITY CHARACTERISTICS
Table 5. D.C. OPERATING CHARACTERISTICS
Table 6. A.C. CHARACTERISTICS, READ CYCLE
t
HZ
t
I
I
t
OHZ
CCC
SBC
V
t
V
OLZ
t
OH
ILC
IHC
LZ
(Notes 9, 10)
IH
IL
Symbol
Symbol
N
T
I
LTH
(Note 9)
DR
(Note 7)
END
(Note 8)
V
(Notes 9,
(Note 9)
V
V
= −0.3 V to +0.3 V
(Note 9)
I
(Note 7)
I
(Note 8)
I
t
t
t
t
10)
= V
CC
I
RC
CE
OE
SB
LO
AA
Symbol
OH
LI
OL
WI
V
(Notes 5)
(Note 6)
CC
(Note 5)
ZAP
− 0.3 V to V
Read Cycle Time
CE Access Time
Address Access Time
OE Access Time
CE Low to Active Output
OE Low to Active Output
CE High to High−Z Output
OE High to High−Z Output
Output Hold from Address Change
V
V
V
V
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
CC
CC
CC
CC
Current (Operating, TTL)
Current (Operating, CMOS)
Current (Standby, TTL)
Current (Standby, CMOS)
CC
Endurance
Data Retention
ESD Susceptibility
Latch−Up
+ 0.3 V
Parameter
Parameter
Parameter
(Note 4)
(V
http://onsemi.com
CE = OE = V
f = 1/t
CE = OE = V
f = 1/t
CE = V
CE = V
V
V
CE = V
I
I
CC
(V
OH
OL
IN
OUT
CC
= 5 V ±10%, unless otherwise specified.)
= 2.1 mA
= GND to V
= −400 mA
RC
RC
= 5 V ±10%, unless otherwise specified.)
= GND to V
Test Conditions
IH
IHC
IH
min, All I/O’s Open
min, All I/O’s Open
, All I/O’s Open
Min
3
90
, All I/O’s Open
28C16A−90
0
0
0
IL
ILC
,
CC
,
CC
Max
,
90
90
50
50
50
100,000
Min
120
2,000
28C16A−12
Min
100
100
0
0
0
−0.3
Min
−10
−10
2.4
3.0
2
Max
120
120
60
50
50
CC
Typ
Limits
+ 1 V.
Max
Min
200
28C16A−20
0
0
0
V
CC
Max
100
0.8
0.4
35
25
10
10
1
+ 0.3
Max
200
200
80
55
55
Cycles/Byte
Units
Years
mA
V
Units
Units
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
V