AT49LV002-70TC Atmel, AT49LV002-70TC Datasheet - Page 2

• Manufacturer Part Number: AT49LV002-70TC
• Manufacturer: Atmel

Specifications of AT49LV002-70TC

• Cell Type: NOR
• Density: 2Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 18b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 3 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 256K
• Supply Current: 25mA
• Mounting: Surface Mount
• Pin Count: 32
• Lead Free Status / Rohs Status: Not Compliant

Block Diagram
2
AT49BV/LV002(N)(T)
When the device is deselected, the CMOS standby current is less than 50 µA. For the
AT49BV/LV002N(T) pin 1 for the DIP and PLCC packages and pin 9 for the TSOP package
a r e d o n’ t c o n n e c t pi n s . T o al l o w f o r s i m p l e i n - s y s t e m r e p r o g r a m m a bi l i ty , t h e
AT49BV/LV002(N)(T) does not require high input voltages for programming. Five-volt-only
commands determine the read and programming operation of the device. Reading data out of
the device is similar to reading from an EPROM; it has standard CE, OE, and WE inputs to
avoid bus contention. Reprogramming the AT49BV/LV002(N)(T) is performed by erasing a
block of data and then programming on a byte by byte basis. The byte programming time is a
fast 50 µ s. The end of a program cycle can be optionally detected by the DATA polling feature.
Once the end of a byte program cycle has been detected, a new access for a read or program
can begin. The typical number of program and erase cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device internally con-
trols the erase operations. There are two 8K byte parameter block sections and two main
memory blocks.
The device has the capability to protect the data in the boot block; this feature is enabled by a
command sequence. The 16K-byte boot block section includes a reprogramming lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code, and
when the feature is enabled, the boot sector is protected from being reprogrammed.
In the AT49BV/LV002N(T), once the boot block programming lockout feature is enabled, the
contents of the boot block are permanent and cannot be changed. In the AT49BV/LV002(T),
once the boot block programming lockout feature is enabled, the contents of the boot block
cannot be changed with input voltage levels of 5.5 volts or less.
ADDRESS
INPUTS
RESET
GND
VCC
WE
OE
CE
Y DECODER
X DECODER
CONTROL
LOGIC
DATA INPUTS/OUTPUTS
AT49BV/LV002(N)
DATA LATCHES
INPUT/OUTPUT
MAIN MEMORY
MAIN MEMORY
(128K BYTES)
BOOT BLOCK
PARAMETER
PARAMETER
(96K BYTES)
(16K BYTES)
(8K BYTES)
(8K BYTES)
PROGRAM
Y-GATING
I/O7 - I/O0
BUFFERS
BLOCK 2
BLOCK 1
BLOCK 2
BLOCK 1
8
3FFFF
20000
1FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
DATA INPUTS/OUTPUTS
AT49BV/LV002(N)T
DATA LATCHES
INPUT/OUTPUT
MAIN MEMORY
MAIN MEMORY
(128K BYTES)
BOOT BLOCK
PARAMETER
PARAMETER
(16K BYTES)
(96K BYTES)
(8K BYTES)
(8K BYTES)
PROGRAM
Y-GATING
I/O7 - I/O0
BUFFERS
BLOCK 1
BLOCK 2
BLOCK 1
BLOCK 2
8
0982D–FLASH–02/03
3FFFF
3C000
3BFFF
3A000
39FFF
38000
37FFF
20000
1FFFF
00000