SI7900AEDN-T1 Vishay, SI7900AEDN-T1 Datasheet

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SI7900AEDN-T1

Manufacturer Part Number
SI7900AEDN-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI7900AEDN-T1

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.026Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
6A
Power Dissipation
1.5W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
PowerPAK 1212
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7900AEDN-T1
Manufacturer:
VISHAY
Quantity:
20 817
Part Number:
SI7900AEDN-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY
Quantity:
4 189
Part Number:
SI7900AEDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7900AEDN-T1-E3
Quantity:
5 250
Part Number:
SI7900AEDN-T1-GE3
Manufacturer:
I-PEX
Quantity:
1 001
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72287
S-81544-Rev. C, 07-Jul-08
Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
V
DS
20
(V)
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
8
3.30 mm
D
7
D
Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.026 at V
0.030 at V
0.036 at V
6
PowerPAK 1212-8
D
R
5
DS(on)
Bottom View
J
a
D
= 150 °C)
a
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
1
S1
a
2
G1
3
S2
a
3.30 mm
4
G2
A
I
= 25 °C, unless otherwise noted
D
8.5
Steady State
Steady State
8
7
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New PowerPak
• 3000 V ESD Protection
• Protection Switch for 1-2 Li-ion Batteries
G
Symbol
Symbol
1
T
R
R
J
- Low Thermal Resistance, R
- Low 1.07 mm Profile
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
2.6 kΩ
N-Channel
®
Power MOSFET: 1.8 V Rated
Typical
®
10 s
8.5
6.4
2.9
3.1
1.6
2.2
32
65
Package
D
- 55 to 150
S
1
1
± 12
20
30
Steady State
Maximum
G
thJC
2
0.79
4.3
1.4
1.5
2.8
40
82
Si7900AEDN
Vishay Siliconix
6
2.6 kΩ
N-Channel
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
D
S
2
2
1

Related parts for SI7900AEDN-T1

SI7900AEDN-T1 Summary of contents

Page 1

... S1 3. Bottom View Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free) Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7900AEDN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Document Number: 72287 S-81544-Rev. C, 07-Jul- 0.1 75 100 125 150 Si7900AEDN Vishay Siliconix ° °C 20 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 6 Total Gate Charge (nC) ...

Page 4

... Si7900AEDN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.05 0.04 0.03 0.02 0.01 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 0.001 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72287. Document Number: 72287 S-81544-Rev. C, 07-Jul- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7900AEDN Vishay Siliconix - www.vishay.com 1 5 ...

Page 6

... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN ...

Page 7

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 8

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 9

... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) Vishay Siliconix TSOP-8 PPAK 1212 Dual Single Dual Single ...

Page 10

... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...

Page 11

... RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) 0.016 (0.405) 0.026 (0.660) Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 Application Note 826 ® 1212-8 Single 0.152 (3.860) 0.068 (1.725) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix 0.010 (0.255) www.vishay.com 7 ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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