FDD6676AS_NL Fairchild Semiconductor, FDD6676AS_NL Datasheet - Page 5

• Manufacturer Part Number: FDD6676AS_NL
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of FDD6676AS_NL

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0057Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 90A
• Power Dissipation: 70W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252AA
• Dc: 06+
• Lead Free Status / Rohs Status: Compliant

Typical Characteristics
1000
0.01
10
100
0.1
8
6
4
2
0
10
1
Figure 9. Maximum Safe Operating Area
0
0.01
Figure 7. Gate Charge Characteristics
I
D
SINGLE PULSE
R
R
0.001
= 78A
θ JA
DS(ON)
0.01
V
T
0.1
GS
A
= 96
0.0001
1
= 25
= 10V
LIMIT
10
o
o
C/W
C
0.1
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
Q
0.05
0.02
g
, GATE CHARGE (nC)
0.01
20
0.001
V
DS
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1b.
SINGLE PULSE
= 10V
DC
1
Figure 11. Transient Thermal Response Curve
10s
30
1s
100ms
15V
10ms
0.01
20V
10
1ms
40
100us
0.1
100
50
t
1
, TIME (sec)
4000
3000
2000
1000
50
40
30
20
10
0
0.001
1
0
Figure 8. Capacitance Characteristics
0
C
Figure 10. Single Pulse Maximum
rss
0.01
5
V
Power Dissipation
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
0.1
10
t
1
, TIME (sec)
P(pk
Duty Cycle, D = t
T
R
J
θJA
R
15
1
100
- T
θJA
(t) = r(t) * R
t
1
A
t
= 96°C/W
2
= P * R
20
10
θJA
θJA
1
C
(t)
/ t
iss
SINGLE PULSE
2
R
1000
θ JA
T
FDD6676AS Rev A1(X)
A
= 96°C/W
= 25°C
100
25
V
f = 1MHz
GS
= 0 V
1000
30