71V416S12YG IDT, Integrated Device Technology Inc, 71V416S12YG Datasheet
71V416S12YG
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71V416S12YG Summary of contents
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Features ◆ ◆ ◆ ◆ ◆ 256K x 16 advanced high-speed CMOS Static RAM ◆ ◆ ◆ ◆ ◆ JEDEC Center Power / GND pinout for reduced noise. ◆ ◆ ◆ ◆ ◆ Equal access and cycle times – Commercial ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Pin Configurations - SOJ/TSOP SO44-1 ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Absolute Maximum Ratings Symbol Rating V Supply Voltage Relative Terminal Voltage Relative IN, OUT Temperature Under Bias BIAS T ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) DC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter |I | Input Leakage Current Output Leakage Current LO V ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) AC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Read Cycle No. 2 ADDRESS OE CS BHE, BLE DATA OUT NOTES HIGH for Read Cycle. 2. Address must be valid prior to ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ADDRESS BHE, BLE WE DATA OUT DATA IN Timing Waveform of Write Cycle No. 3 (BHE, ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Ordering Information X 71V416 X Die Device Power Revistion Type X XX XXX X Process/ Speed Package Temperature Range 6.42 8 Commercial and Industrial Temperature Ranges Blank Commercial (0°C ...
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IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Datasheet Document History 08/5/99 Updated to new format Pg 6 Revised footnote for Write Cycle No. 1 diagram 08/31/99 Pg. 1–9 Added Industrial temperature range offering ...