SI4866DY Vishay, SI4866DY Datasheet - Page 7
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SI4866DY
Manufacturer Part Number
SI4866DY
Description
MOSFET Power N-Ch 12 Volt 11 Amp
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of SI4866DY
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0055Ohm
Drain-source On-volt
12V
Gate-source Voltage (max)
±8V
Continuous Drain Current
11A
Power Dissipation
1.6W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0055 Ohms
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
35 ns
Minimum Operating Temperature
- 55 C
Rise Time
32 ns
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4866DY-T1
Manufacturer:
ROHM
Quantity:
1 910
Part Number:
SI4866DY-T1
Manufacturer:
SI
Quantity:
20 000
Company:
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4866DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08