SI4866DY Vishay, SI4866DY Datasheet - Page 2

• Manufacturer Part Number: SI4866DY
• Description: MOSFET Power N-Ch 12 Volt 11 Amp
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI4866DY

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0055Ohm
• Drain-source On-volt: 12V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 11A
• Power Dissipation: 1.6W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / Rohs Status: Not Compliant

Si4866DY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
50
40
30
20
10
0
0
a
a
V
1
V
GS
DS
Output Characteristics
a
= 10 V thru 2.5 V
- Drain-to-Source Voltage (V)
2
a
Symbol
R
V
2 V
I
t
t
I
I
D(on)
DS(on)
V
J
GS(th)
Q
Q
d(on)
d(off)
3
GSS
DSS
R
g
Q
t
t
SD
t
rr
gd
= 25 °C, unless otherwise noted
fs
gs
r
f
G
g
4
1.5 V
V
V
I
D
DS
DS
≅ 1 A, V
I
F
= 9.6 V, V
V
= 6 V, V
V
V
V
= 2.7 A, dI/dt = 100 A/µs
I
DS
5
DS
V
V
V
DS
DS
S
V
Test Conditions
GS
GS
DD
= 2.7 A, V
DS
= V
= 0 V, V
= 9.6 V, V
≥ 5 V, V
GEN
= 4.5 V, I
= 2.5 V, I
= 6 V, R
= 6 V, I
GS
GS
GS
, I
= 4.5 V, R
= 4.5 V, I
= 0 V, T
D
GS
GS
GS
= 250 µA
D
L
GS
D
D
= 4.5 V
= ± 8 V
= 17
= 6 Ω
= 0 V
= 17
= 14
= 0 V
J
D
G
= 70 °C
= 17 A
= 6 Ω
50
40
30
20
10
0
0.0
0.5
Min.
V
0.6
1.5
40
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
25 °C
1.0
T
0.0045
0.0065
C
Typ.
0.70
4.6
3.5
2.3
80
21
28
32
82
35
60
S09-0228-Rev. D, 09-Feb-09
= 125 °C
Document Number: 71699
1.5
0.0055
± 100
0.008
Max.
123
1.1
3.9
30
42
48
53
90
1
5
- 55 °C
2.0
Unit
nC
nA
µA
ns
Ω
Ω
V
A
S
V
2.5