GS8160Z36T-133 GSI TECHNOLOGY, GS8160Z36T-133 Datasheet

GS8160Z36T-133

Manufacturer Part Number
GS8160Z36T-133
Description
Manufacturer
GSI TECHNOLOGY
Datasheet

Specifications of GS8160Z36T-133

Density
18Mb
Access Time (max)
8.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
117.6MHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
TQFP
Operating Temp Range
0C to 70C
Number Of Ports
4
Supply Current
140mA
Operating Supply Voltage (min)
2.3/3V
Operating Supply Voltage (max)
2.7/3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
512K
Lead Free Status / Rohs Status
Not Compliant
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
Functional Description
The GS8160Z18/36T is an 18Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
Rev: 2.17 11/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
read-write-read bus utilization; Fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
Through
Pipeline
3-1-1-1
2-1-1-1
18Mb Pipelined and Flow Through
3.3 V
2.5 V
Flow
3.3 V
2.5 V
Synchronous NBT SRAM
Curr
Curr
Curr
Curr
Curr
Curr
Curr
Curr
tCycle
tCycle
t
t
(x32/x36)
(x32/x36)
(x32/x36)
(x32/x36)
KQ
KQ
(x18)
(x18)
(x18)
(x18)
Parameter Synopsis
1/24
-250 -225 -200 -166 -150 -133 Unit
280
330
275
320
175
200
175
200
2.5
4.0
5.5
5.5
255
300
250
295
165
190
165
190
2.7
4.4
6.0
6.0
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8160Z18/36T may be configured by the user to operate
in Pipeline or Flow Through mode. Operating as a pipelined
synchronous device, meaning that in addition to the rising edge
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8160Z18/36T is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
Standard 100-pin TQFP package.
230
270
230
265
160
180
160
180
3.0
5.0
6.5
6.5
200
230
195
225
150
170
150
170
GS8160Z18/36T-250/225/200/166/150/133
3.4
6.0
7.0
7.0
185
215
180
210
145
165
145
165
3.8
6.7
7.5
7.5
165
190
165
185
135
150
135
150
4.0
7.5
8.5
8.5
mA
mA
mA
mA
mA
mA
mA
mA
ns
ns
ns
ns
© 1998, GSI Technology
2.5 V or 3.3 V V
2.5 V or 3.3 V I/O
DD

Related parts for GS8160Z36T-133

GS8160Z36T-133 Summary of contents

Page 1

... Curr 200 190 180 170 (x32/x36) 1/ 3.3 V I/O 3.8 4.0 ns 6.7 7.5 ns 185 165 mA 215 190 mA 180 165 mA 210 185 mA 7.5 8.5 ns 7.5 8.5 ns 145 135 mA 165 150 mA 145 135 mA 165 150 mA © 1998, GSI Technology DD ...

Page 2

... DDQ DDQ DDQ DQP DDQ Rev: 2.17 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 GS8160Z18T Pinout Top View 2/ DDQ DQP DDQ DDQ DDQ © 1998, GSI Technology ...

Page 3

... DQP DDQ DDQ DDQ DDQ DQP Rev: 2.17 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 GS8160Z36T Pinout 512K x 36 Top View 3/24 DQP DDQ DDQ DDQ DDQ DQP 51 A © 1998, GSI Technology ...

Page 4

... Byte D Data Input and Output pins Power down control; active high Pipeline/Flow Through Mode Control; active low Linear Burst Order; active low Core power supply Ground Output driver power supply 4/24 ; active low A9 ; active low B9 ; active low C9 ; active low D9 © 1998, GSI Technology ...

Page 5

... GS8160Z18/36 NBT SRAM Functional Block Diagram Rev: 2.17 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 Amps Sense Drivers Write 5/24 © 1998, GSI Technology ...

Page 6

... Rev: 2.17 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 & determine which bytes will be written. All or none may be activated. A write and E ). Deassertion of any one of the Enable © 1998, GSI Technology ...

Page 7

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 External L Next L External L Next L External L Next L Next L None L None L None L None L None L None Current L 7/ High High High-Z 1,2,3, High High High High High High © 1998, GSI Technology Notes 1,10 2 1,2,10 3 1,3, ...

Page 8

... and D represent input command codes ,as indicated in the Synchronous Truth Table. n+1 n+2 ƒ ƒ Next State Pipeline and Flow Through Read/Write Control State Diagram 8/24 New Write Burst Write B D n+3 ƒ ƒ © 1998, GSI Technology ...

Page 9

... and D represent input command codes as indicated in the Truth Tables. Next State (n+2) n n+1 n+2 ƒ ƒ Intermediate Current State State Pipeline Mode Data I/O State Diagram 9/24 Intermediate R B Data Out W (Q Valid) D n+3 ƒ ƒ Next State © 1998, GSI Technology ...

Page 10

... Pipeline and Flow Through Read Write Control State Diagram 10/ Data Out W (Q Valid) D Notes 1. The Hold command (CKE Low) is not shown because it prevents any state change and D represent input command codes as indicated in the Truth Tables. n+2 n+3 ƒ ƒ © 1998, GSI Technology ...

Page 11

... Note: The burst counter wraps to initial state on the 5th clock. 11/24 Function Linear Burst Interleaved Burst Flow Through Pipeline Active Standby High Drive (Low Impedance) Low Drive (High Impedance) A[1:0] A[1:0] A[1:0] A[1: BPR 1999.05.18 © 1998, GSI Technology ...

Page 12

... Rev: 2.17 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 Sleep Mode Timing Diagram tKH tKH tKL tKL tZZS tZZH DD 12/24 2. The duration of SB tZZR pipelined parts and V on flow DDQ SS © 1998, GSI Technology ...

Page 13

... GS8160Z18/36T-250/225/200/166/150/133 Value –0.5 to 4.6 –0.5 to 4.6 –0 +0.5 (≤ 4.6 V max.) DDQ –0 +0.5 (≤ 4.6 V max.) DD +/–20 +/–20 1.5 –55 to 125 –55 to 125 Typ. Max. Unit 3.3 3.6 V 2.5 2.7 V 3.3 3.6 V 2.5 2.7 V © 1998, GSI Technology Unit Notes ...

Page 14

... V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. DDn 14/24 Max. Unit Notes 0.3 V 1,3 DDQ 0.8 V 1,3 Max. Unit Notes 0.3 0.3 V 1,3 DDQ 0.3*V V 1,3 DD Max. Unit Notes ° ° © 1998, GSI Technology ...

Page 15

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 Overshoot Measurement and Timing 50% V Symbol Test conditions I/O OUT Conditions V – DDQ Fig. 1 Output Load 1 DQ 50Ω V DDQ/2 * Distributed Test Jig Capacitance 15/24 50% tKC Typ. Max. Unit 30pF © 1998, GSI Technology ...

Page 16

... V ≤ Output Disable OUT –8 mA, V OH2 OH DDQ –8 mA, V OH3 OH DDQ 16/24 Min – ≥ V – ≤ V –1 uA 100 uA IH ≥ V –100 uA IL ≤ V – – 2.375 V 1 3.135 V 2.4 V — © 1998, GSI Technology Max — — 0.4 V ...

Page 17

... Rev: 2.17 11/2004 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 17/24 © 1998, GSI Technology ...

Page 18

... GSI Technology -133 Unit Min Max 7.5 ns — — 4.0 ns 1.5 — ns 1.5 — ns 1.5 ns — 0.5 — ns 8.5 ns — — 8 ...

Page 19

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 Pipeline Mode Timing (NBT) Suspend Read C Write D writeno-op tKH tKH tKC tKC tKL tKL D(A) Q(B) Q(C) 19/24 Read E Deselect E tLZ tHZ tKQ tKQX D(D) Q(E) © 1998, GSI Technology ...

Page 20

... Flow Through Mode Timing (NBT) Write B+1 Read C Cont tKL tKL tKH tKH tKC tKC C D tKQ tLZ D(B) D(B+1) Q(C) tOHZ 20/24 Read D Write E Read F Write tKQ tKQX tHZ tLZ Q(D) D(E) Q(F) tOLZ tOE © 1998, GSI Technology tKQX D(G) ...

Page 21

... Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS8160Z18/36T-250/225/200/166/150/133 θ 0.10 0.15 1.40 1.45 0.30 0.40 0.20 — e 22.0 22.1 20.0 20.1 16.0 16.1 b 14.0 14.1 0.65 — 0.60 0.75 1.00 — 0.10 — 7° 21/ © 1998, GSI Technology ...

Page 22

... GS8160Z36T-166I 512K x 36 GS8160Z36T-150I 512K x 36 GS8160Z36T-133I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS816Z36-166IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user ...

Page 23

... Updated DQ on page 19 • Updated DQ on page 21 • Updated Pin Description table • Updated Operating Currents table Content • Updated table on page 1; updated power numbers • Updated Recommended Operating Conditions table (added V references) DDQ 23/24 in pin description table. SS © 1998, GSI Technology ...

Page 24

... Removed Preliminary banner Content • Removed pin locations from pin description table • Corrected pin Content • Updated format Content/Format • Corrected block diagram • Added parity designator (“P”) to Pin 1 on x36 Content/Format • Updated format Content/Format 24/24 © 1998, GSI Technology ...

Related keywords