SI5933DC-T1 Vishay, SI5933DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5933DC-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI5933DC-T1

• Number Of Elements: 2
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.11Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Continuous Drain Current: 2.7A
• Power Dissipation: 1.1W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: ChipFET
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 71238
S-50366—Rev. D, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
0.2
= 2.7 A
On-Resistance vs. Drain Current
= 10 V
1
2
V
SD
Q
T
0.4
g
J
− Source-to-Drain Voltage (V)
V
I
= 150_C
− Total Gate Charge (nC)
D
2
GS
− Drain Current (A)
V
Gate Charge
= 1.8 V
4
GS
0.6
= 2.5 V
3
0.8
6
4
1.0
T
V
J
GS
= 25_C
8
= 4.5 V
5
1.2
1.4
10
6
800
600
400
200
0.4
0.3
0.2
0.1
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
V
I
−25
D
GS
= 2.7 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
C
− Junction Temperature (_C)
oss
C
− Gate-to-Source Voltage (V)
iss
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 2.7 A
12
3
75
Si5933DC
100
16
www.vishay.com
4
125
150
20
5
3