AT49F010-90TC Atmel, AT49F010-90TC Datasheet - Page 2

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AT49F010-90TC

Manufacturer Part Number
AT49F010-90TC
Description
Manufacturer
Atmel
Datasheet

Specifications of AT49F010-90TC

Cell Type
NOR
Density
1Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom
Address Bus
17b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
TSOP-I
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
128K
Supply Current
30mA
Mounting
Surface Mount
Pin Count
32
Lead Free Status / Rohs Status
Not Compliant

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To allow for simple in-system reprogrammability, the
AT49F010/HF010 does not require high input voltages for
programming. Five-volt-only commands determine the read
and programming operation of the device. Reading data
out of the device is similar to reading from an EPROM.
Reprogramming the AT49F010/HF010 is performed by
erasing the entire 1 megabit of memory and then program-
ming on a byte by byte basis. The byte programming time
is a fast 50 s. The end of a program cycle can be option-
ally detected by the DATA polling feature. Once the end of
a byte program cycle has been detected, a new access for
a read or program can begin. The typical number of pro-
gram and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a repro-
gramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is perma-
nently protected from being reprogrammed.
Block Diagram
Device Operation
READ: The AT49F010/HF010 is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
ERASURE: Before a byte can be reprogrammed, the 128K
bytes memory array (or 120K bytes if the boot block fea-
tured is used) must be erased. The erased state of the
memory bits is a logical “1”. The entire device can be
erased at one time by using a 6-byte software code. The
chip erase code consists of 6-byte load commands to spe-
cific address locations with a specific data pattern (please
refer to the Chip Erase Cycle Waveforms).
After the chip erase has been initiated, the device will inter-
nally time the erase operation so that no external clocks
are required. The maximum time needed to erase the
whole chip is t
enabled, the data in the boot sector will not be erased.
2
EC
. If the boot block lockout feature has been
AT49HF/F010
1FFFF
02000
01FFF
00000
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can con-
vert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The device will automatically generate the required internal
program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified t
time. The DATA polling feature may also be used to indi-
cate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular pro-
gramming method. To activate the lockout feature, a series
of six program commands to specific addresses with spe-
cific data must be performed. Please refer to the Command
Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-
out feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
BP
cycle

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