AM29DL640H-90EI Spansion Inc., AM29DL640H-90EI Datasheet - Page 23

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AM29DL640H-90EI

Manufacturer Part Number
AM29DL640H-90EI
Description
Manufacturer
Spansion Inc.
Datasheet

Specifications of AM29DL640H-90EI

Cell Type
NOR
Density
64Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Bottom/Top
Address Bus
23/22Bit
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
3/8.5 to 9.5V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
8M/4M
Supply Current
16mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AM29DL640H-90EI
Manufacturer:
AMD
Quantity:
61
Company:
Part Number:
AM29DL640H-90EI
Quantity:
423
June 7, 2005
(Word Mode)
Addresses
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
(Byte Mode)
Addresses
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
50h
52h
54h
56h
58h
60h
62h
64h
66h
68h
70h
72h
74h
76h
78h
Table 10. Device Geometry Definition
007Dh
0017h
0002h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Data
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
Am29DL640H
N
byte
Description
N
21

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