MTDF1N03HDR2 ON Semiconductor, MTDF1N03HDR2 Datasheet - Page 3

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MTDF1N03HDR2

Manufacturer Part Number
MTDF1N03HDR2
Description
Manufacturer
ON Semiconductor
Datasheet

Specifications of MTDF1N03HDR2

Number Of Elements
2
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MTDF1N03HDR2
Manufacturer:
KYOCERA
Quantity:
2 950
(1) Pulse Test: Pulse Width
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS =
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Forward Transconductance (V DS = 10 Vdc, I D = 0.85 Adc)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Storage Charge
(V GS = 0 Vdc, I D = 250 µAdc)
Temperature Coefficient (Positive)
(V DS = 24 Vdc, V GS = 0 Vdc)
(V DS = 24 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 µAdc)
Threshold Temperature Coefficient (Negative)
(V GS = 10 Vdc, I D = 1.7 Adc)
(V GS = 4.5 Vdc, I D = 0.85 Adc)
C pk =
300 µs, Duty Cycle
Characteristic
Max limit – Typ
(I S = 1.7 Adc, V GS = 0 Vdc, T J = 125 C)
3 x SIGMA
20 Vdc, V DS = 0)
(T A = 25 C unless otherwise noted)
(I S = 1.7 Adc, V GS = 0 Vdc) (1)
V GS = 4.5 Vdc, R G = 6 Ω) (1)
V GS = 10 Vdc, R G = 6 Ω) (1)
(V
(V DD = 15 Vdc, I D = 0.85 Adc,
( DD
(V
(V DS = 25 Vdc, V GS = 0 Vdc,
(V
(V DS = 15 Vdc, I D = 1.7 Adc,
( DS
(V
(V DS = 24 Vdc, I D = 1.7 Adc,
( DS
(I
(I S = 1.7 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/µs) (1)
dI S /dt = 100 A/µs) (1)
1 7 Adc V
V GS = 10 Vdc)
2%.
15 Vd
25 Vdc V
15 Vd
24 Vd
f = 1.0 MHz)
f = 1.0 MHz)
(Cpk
(Cpk
(Cpk
, D
, D
, D
I
I
I
2.0)
2.0)
2.0)
0 85 Ad
1 7 Ad
1 7 Ad
0 Vdc
0 Vdc
(1) (3)
(3)
(3)
(1)
,
,
,
V (BR)DSS
R DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
t d(on)
t d(off)
I GSS
I DSS
C oss
Q RR
C rss
C iss
V SD
g FS
Q T
Q 1
Q 2
Q 3
t rr
t a
t b
t r
t f
t r
t f
Min
1.0
1.0
30
0.012
14.5
1.65
0.84
Typ
135
140
1.6
3.7
2.0
7.5
7.0
8.2
5.0
0.5
1.3
0.7
8.0
29
96
70
30
10
22
18
22
20
12
MTDF1N03HD
Max
100
120
160
1.0
7.0
1.0
25
mV/ C
mV/ C
Mhos
µAdc
nAdc
Unit
Vdc
Vdc
Vdc
mΩ
nC
µC
pF
ns
ns
ns
3

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