HMMC-5025 Avago Technologies US Inc., HMMC-5025 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5025
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of HMMC-5025

• Number Of Channels: 1
• Frequency (max): 50GHz
• Output Power: 12@40000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 7V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 170@5VmA
• Lead Free Status / Rohs Status: Compliant

3
Application
The HMMC-5025 traveling wave
amplifier is designed for use as a
general purpose wideband power
stage in communication systems,
and microwave instrumentation,
and optical systems. It is ideally
suited for broadband applica-
tions requiring a flat gain re-
sponse and excellent port
matches over a 2 to 50 GHz fre-
quency range. Dynamic gain con-
trol and low-frequency extension
capabilities are designed into
these devices.
Biasing and Operation
The recommended bias condi-
tions for best performance for
the HMMC-5025 are V
I
drain current levels, V
typically biased between -0.2V
and -0.6V. No other bias supplies
or connections to the device are
required for 2 to 50 GHz opera-
tion. The gate voltage (V
Figure 1. HMMC-5025 Schematic.
RF INPUT
DD
= 75 mA. To achieve these
8.5
Low Frequency
Extension
15
15
470
340
GND
50
1.5
Drain
Bias
DD
G1
G1
= 5.0V,
is
)
Seven Identical Stages
should be applied prior to the
drain voltage (V
up and removed after the drain
voltage during power down.
The HMMC-5025 is a DC coupled
amplifier. External coupling
capacitors are needed on RF
and RF
pad is connected to RF and must
be decoupled to the lowest
operating frequency.
The auxiliary gate and drain
contacts are provided when
performance below 1 GHz in
required. Connect external
capacitors to ground to maintain
input and output VSWR at low
frequencies (see Additional
References). Do not apply bias to
these pads.
The second gate (V
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact.
OUT
ports. The drain bias
DD
) during power
G2
) can be
Gate
Bias
IN
350
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical
factors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References:
AN #1053, “Designing with
HMMC-5021, -5022, -5026, and
-5027 GaAs MMIC Amplifiers.”
50
9.2
6
Low Frequency
RF OUTPUT
8.5
Extension
Second Gate
Bias