HMMC-5026 Avago Technologies US Inc., HMMC-5026 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5026
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of HMMC-5026

• Number Of Channels: 1
• Frequency (max): 26.5GHz
• Output Power: 15@26500MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 8V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 250@7VmA
• Lead Free Status / Rohs Status: Compliant

3
Applications
The HMMC-5021/26 series of
traveling wave amplifiers are
designed for use as general
purpose wideband gain blocks in
commu-nication systems and
microwave instrumentation. They
are ideally suited for broadband
applications requiring a flat gain
re-sponse and excellent port
matches over a 2 to 26.5 GHz
frequency range. Dynamic gain
control and low-frequency
extension capabilities are de-
signed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
supply (V
bias conditions for the
HMMC-5021/26 are V
I
performance. To achieve this
drain current level, V
cally biased between -0.2V and -
0.5V. No other bias supplies or
connections to the device are
required for 2 to 26.5 GHz
operation. See Figure 3 for
assembly information.
Figure 1. Schematic.
Drain Bias
(V
Aux. Drain
RF Input
DD
DD
DD
)
= 150 mA for best overall
) and a single negative gate
G1
). The recommended
G1
DD
is typi-
= 7.0V,
Single Stage Shown
Sense
Diode
Temp
The HMMC-5021/26 is a DC
coupled amplifier. External cou-
pling capacitors are needed on
RF IN and RF OUT ports. The
drain bias pad is connected to RF
and must be decoupled to the
lowest operating frequency.
The auxiliary gate and drain con-
tacts are provided when perfor-
mance below 1 GHz in required.
Connect external capacitors to
ground to maintain input and
output VSWR at low frequencies
(see Additional References). Do
not apply bias to these pads.
The second gate (V
used to obtain 35 dB (typical)
dynamic gain control. For normal
operation, no external bias is
required on this contact and its
self-bias voltage is ≈ +2.1V.
Applying an external bias be-
tween its open-circuit voltage
and -2.5 volts will adjust the gain
while maintaining a good input/
output port match.
Temp
Diode
Force
Seven Identical Stages
124
124
Bias (V
First Gate
G2
) can be
G1
)
Note:
FET gate periphery in microns.
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must be
employed in all aspects of storage,
handling, and assembly. MMIC
ESD precautions, handling consid-
erations, die attach and bonding
methods are critical factors in
successful GaAs MMIC perfor-
mance and reliability. Avago
application note #54, “GaAs MMIC
ESD, Die Attach and Bonding
Guidelines” provides basic infor-
mation on these subjects.
Additional References
AN# 31, “2–26.5 GHz Variable Gain
Amplifier Using HMMC-5021/22/26
and HMMC-1002 GaAs MMIC,”
AN# 34, “HMMC-5021/22/26/27
TWA Environmental Data,” AN# 41,
“HMMC-5021/22/26 S-Parameters
Performance as a Function of
Bonding Configuration,” AN# 47,
“HMMC-5021/22/26 2–26.5 GHz
GaAs MMIC Distributed Amplifier
Conversion Guide,” and AN# 1053,
“Designing with HMMC-5021/22/26
and HMMC-5027 GaAs MMIC
Amplifiers.”
Aux. Gate
RF Output
Second Gate
Bias (V
G2
)