HMMC-5032 Avago Technologies US Inc., HMMC-5032 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5032
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of HMMC-5032

• Number Of Channels: 1
• Frequency (max): 32GHz
• Output Power: 22dBm
• Power Supply Requirement: Single
• Single Supply Voltage (min): 2V
• Single Supply Voltage (typ): 4.5V
• Single Supply Voltage (max): 5V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 320@4.5VmA
• Operating Temperature Classification: Industrial
• Operating Temp Range: -55C to 95C
• Lead Free Status / Rohs Status: Compliant

3
Applications
The HMMC-5032 MMIC is a broad-
band power amplifier designed for
use in transmitters that operate in
various frequency bands between
17.7 GHz and 32 GHz. It can be
attached to the output of the
HMMC-5040 (20 –40 GHz) or the
HMMC-5618 (5.9 – 20 GHz) MMIC
amplifier, increasing the power
handling capability of transmitters
requiring linear operation.
Biasing and Operation
The recommended DC bias con-
dition is with both drains (V
and V
4.5 volt supply and both gates
(V
adjustable negative voltage
supply. The gate voltage is
adjusted for a total drain supply
current of typically 250 mA.
The RF input and output are
AC-coupled.
Figure 1. HMMC-5032 Simplified Schematic Diagram.
RF Input
R1 = 10 KΩ
G1
and V
D2
) connected to single
G2
) connected to an
Stage 1
V
V
D1
G1
D1
Stage 2
V
V
D2
G2
Ref. D2
Det. Ref.
An optional output power
detector network is also pro-
vided. Detector sensitivity can be
adjusted by biasing the diodes
with typically 1 to 5 volts applied
to the Det-Bias terminal. Simply
connecting Det-Bias to the V
supply is a convenient method of
biasing this detector network.
The differential voltage between
the Det-Ref and Det-Out bonding
pads can be correlated to the RF
power emerging from the RF
Output port.
No ground wires are needed
because ground connections are
made with plated through-holes
to the backside of the device.
Assembly Techniques
It is recommended that the elec-
trical connections to the bonding
pads be made using 0.7–1.0 mil
diameter gold wire. The micro-
wave/millimeter-wave connec-
tions should be kept as short as
Det. Bias
R1
D1
Det. Out
R1
C
RF Output
D2
possible to minimize inductance.
For assemblies requiring long
bond wires, multiple wires can be
attached to the RF bonding pads.
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References
PN# 3, “HMMC-5040 and
HMMC-5032 Demo, 20-32 GHz
High Gain Medium Power Amp,”
and PN# 4, “HMMC-5032
Intermodulation Distortion.”