HMMC-5022 Avago Technologies US Inc., HMMC-5022 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5022
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of HMMC-5022

• Number Of Channels: 1
• Frequency (max): 22GHz
• Output Power: 18@22000MHzdBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 8V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 250@7VmA
• Lead Free Status / Rohs Status: Compliant

Applications
The HMMC-5021/22/26 series of
traveling wave amplifiers are
designed for use as general pur-
pose wideband gain blocks in
communication systems and mi-
crowave instrumentation. They
are ideally suited for broadband
applications requiring a flat
gain response and excellent
port matches over a 2 to 26.5
GHz frequency range. Dynamic
gain control and low–frequency
extension capabilities are de-
signed into these devices.
Biasing and Operation
These amplifiers are biased with
a single positive drain supply
(V
supply (V
bias conditions for the HMMC-
5021/22/26 are V
150mA for best overall perfor-
mance. To achieve this drain
current level, V
ased between 0.2V and 0.5V.
No other bias supplies or con-
nections to the device are re-
quired for 2 to 26.5 GHz
DD
) and a single negative gate
G1
). The recommended
Drain Bias
(V
Aux. Drain
RF Input
DD
)
G1
DD
is typically bi-
=7.0V, I
DD
=
Single Stage Shown
operation. See Figure 3 for as-
sembly information.
The HMMC-5021/22/26 is a DC
coupled amplifier. External cou-
pling capacitors are needed on
RF
drain bias pad is connected to
RF and must be decoupled to
the lowest operating frequency.
The auxiliary gate and drain
contacts are provided when per-
formance below 1 GHz is re-
quired. Connect external
capacitors to ground to main-
tain input and output VSWR at
low frequencies (see Additional
References). Do not apply bias
to these pads.
The second gate (V
used to obtain 35 dB (typical)
dynamic gain control. For nor-
mal operation, no external bias
is required on this contact and
its self–bias voltage is
Applying an external bias be-
tween its open–circuit voltage
and 2.5 volts will adjust the
gain while maintaining a good
input/output port match.
IN
and RF
Temp
Diode
Sense
Schematic
OUT
Figure 1.
Temp
Force
Diode
ports. The
Seven Identical Stages
G2
) can be
124
124
+2.1 v.
First Gate
Bias (V
G1
)
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Agilent application note #54,
"GaAs MMIC ESD, Die Attach
and Bonding Guidelines" pro-
vides basic information on these
subjects.
Additional References:
AN# 31, "2–26.5 GHz Variable
Gain Amplifier Using HMMC-
5021/22/26 and HMMC-1002
GaAs MMIC," AN# 34, "HMMC-
5021/22/26/27 TWA Environ-
mental Data," AN# 41, "HMMC-
5021/22/26 S–Parameters Per-
formance as a Function of Bond-
ing Configuration," and AN# 56,
"GaAs MMIC TWA Users Guide."
Notes:
FET gate periphery in microns.
Aux. Gate
RF Output
Second Gate
Bias (V
G2
)
3