HMMC-5027 Avago Technologies US Inc., HMMC-5027 Datasheet - Page 3

• Manufacturer Part Number: HMMC-5027
• Manufacturer: Avago Technologies US Inc.
• Type: Power Amplifierr

Specifications of HMMC-5027

• Number Of Channels: 1
• Frequency (max): 26.5GHz
• Output Power: 19dBm
• Power Supply Requirement: Single
• Single Supply Voltage (max): 8V
• Package Type: Chip
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Supply Current: 500@8VmA
• Lead Free Status / Rohs Status: Compliant

3
Applications
ing wave amplifiers are designed
for use as general purpose wide-
band power stages in communi-
cation systems and microwave
instrumentation. They are ideally
suited for broadband applications
requiring a flat gain response and
excellent port matches over a 2 to
26.5 GHz frequency range.
Dynamic gain control and low-
frequency extension capabilities
are designed into these devices.
Biasing and Operation
These amplifiers are biased with a
single positive drain supply (V
and a single negative gate supply
(V
conditions for the HMMC-5027 are
V
whichever is less. To achieve this
drain current level, V
biased between 0 V and -0.6V. No
other bias supplies or connections
to the device are required for 2 to
26.5 GHz operation. The gate
voltage (V
Figure 1. Schematic.
Drain Bias
(V
Aux. Drain
RF Input
The HMMC-5027 series of travel-
DD
G1
DD
). The recommended bias
= 8.0V, I
)
G1
) MUST be applied
DD
= 250 mA or I
7.5
G1
50
30K
is typically
DSS
DD
,
)
15K
prior to the drain voltage (V
during power up and removed
after the drain voltage during
power down. See Figure 3 for
assembly information.
The HMMC-5027 is a DC coupled
amplifier. External coupling
capacitors are needed on RF
and RF
pad is connected to RF and must
be decoupled to the lowest
operating frequency. The auxil-
iary gate and drain contacts are
provided when performance
below 1 GHz is required. Connect
external capacitors to ground to
maintain input and output VSWR
at low frequencies (see Addi-
tional References). Do not apply
bias to these pads.
The second gate (V
used to obtain 30 dB (typical)
dynamic gain control. For normal
operation, no external bias is re-
quired on this contact and its
self-bias potential is between
+1.5 and +2.5 volts. Applying an
OUT
Seven Identical Stages
ports. The drain bias
248
248
17K
Single Stage Shown
G2
) can be
DD
IN
)
external bias between its open
circuit potential and -2.5 volts
will adjust the gain while main-
taining a good input/output port
match.
Assembly Techniques
GaAs MMICs are ESD sensitive.
ESD preventive measures must
be employed in all aspects of
storage, handling, and assembly.
MMIC ESD precautions, handling
considerations, die attach and
bonding methods are critical fac-
tors in successful GaAs MMIC
performance and reliability.
Avago application note #54,
“GaAs MMIC ESD, Die Attach
and Bonding Guidelines” pro-
vides basic information on these
subjects.
Additional References:
AN# 34, “HMMC-5021/22/26/27
TWA Environmental Data,”
AN#1053, “Designing with
HMMC-5021/-5022/-5026 and/
-5027 GaAs MMIC Amplifiers.”
Notes:
FET gate periphery in microns.
All resistors in ohms. (Ω),
(or in K-ohms, where indicated)
First Gate
Bias (V
50
G1
)
5.5
Aux. Gate
RF Output
Second Gate
Bias (V
G2
)