BP 104 FAS OSRAM Opto Semiconductors Inc, BP 104 FAS Datasheet

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BP 104 FAS

Manufacturer Part Number
BP 104 FAS
Description
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BP 104 FAS

Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
20V
Forward Voltage
1.3V
Responsivity
0.65A/W
Peak Wavelength
880nm
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
34uA
Rise Time
20ns
Fall Time
20ns
Photodiode Material
Si
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
SMT
Lead Free Status / Rohs Status
Compliant
Silizium-Pin-Fotodiode mit Tageslichtsperrfilter
Silicon Pin Photodiode with Daylight Filter
Lead (Pb) Free Product - RoHS Compliant
BP 104 FAS
BP 104 FASR
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• SMT-fähig
Anwendungen
• IR-Fernsteuerung von Fernseh- und
• Lichtschranken
Typ
Type
BP 104 FAS
BP 104 FASR
2007-04-18
von 730 nm… 1100nm
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
Bestellnummer
Ordering Code
Q65110A2672
Q65110A4263
BP 104 FAS
Fotostrom, E
Photocurrent
Ip (
34 (≥25)
34 (≥25)
1
µ
Features
• Especially suitable for applications from
• Short switching time (typ. 20 ns)
• Suitable for SMT
Applications
• IR remote control of hi-fi and TV sets, video
• Photointerrupters
A)
730 nm… 1100nm
tape recorders, dimmers, remote controls of
various equipment
e
=1 mW/cm
BP 104 FASR
2
, V
R
= 5 V, λ = 880 nm

Related parts for BP 104 FAS

BP 104 FAS Summary of contents

Page 1

... Bestellnummer Type Ordering Code BP 104 FAS Q65110A2672 BP 104 FASR Q65110A4263 2007-04-18 BP 104 FAS Features • Especially suitable for applications from 730 nm… 1100nm • Short switching time (typ. 20 ns) • Suitable for SMT Applications • IR remote control of hi-fi and TV sets, video ...

Page 2

... tot Symbol Symbol I P λ S max λ A ϕ λ η 104 FAS, BP 104 FASR Wert Einheit Value Unit ° C – 40 … + 100 20 V 150 mW Wert Einheit Value Unit µA 34 (≥ 25) 880 nm 730 … 1100 nm 2 4.84 mm ± 60 Grad deg. 2 (≤ 30 ...

Page 3

... Temperature coefficient Temperaturkoeffizient von I Temperature coefficient of Rauschäquivalente Strahlungsleistung Noise equivalent power Nachweisgrenze Detection limit 2007-04-18 Symbol Symbol 800 µ NEP 104 FAS, BP 104 FASR Wert Einheit Value Unit – 2.6 mV/K 0.18 %/K 3.6 × 10 –14 W ----------- - Hz 6.1 × × -------------------------- - W ...

Page 4

... Photocurrent Open-Circuit Voltage 3 10 µ A Ι Ι µ W/cm Capacitance MHz ϕ 1.0 0.8 0.6 0.4 0 104 FAS, BP 104 FASR Total Power Dissipation tot A OHF01056 4 10 160 tot 140 3 10 120 100 Dark Current OHF01778 3 10 Ι ...

Page 5

... Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GPLY7049 5 BP 104 FAS, BP 104 FASR ...

Page 6

... If they fail reasonable to assume that the health of the user may be endangered. 2007-04-18 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 120 s max 50 100 150 6 BP 104 FAS, BP 104 FASR Vorbehandlung nach JEDEC Level 4 Preconditioning acc. to JEDEC Level 4 (nach J-STD-020C) (acc. to J-STD-020C min 30 s max Ramp Down 6 K/s (max) 100 s max ...

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